Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices

2008 ◽  
Vol 79 (4) ◽  
pp. 1086-1095 ◽  
Author(s):  
Alexander I. Fedoseyev ◽  
Marek Turowski ◽  
Michael L. Alles ◽  
Robert A. Weller
Keyword(s):  
Numerical Models ◽  
Semiconductor Devices ◽  
Nano Scale

scholarly journals Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices

2008 ◽  
pp. 281-290 ◽  
Author(s):  
Alexander I. Fedoseyev ◽  
Marek Turowski ◽  
Ashok Raman ◽  
Michael L. Alles ◽  
Robert A. Weller
Keyword(s):  
Numerical Models ◽  
Semiconductor Devices

Inhibiting device degradation induced by surface damages during top-down fabrication of semiconductor devices with micro/nano-scale pillars and holes

2016 ◽  
Author(s):  
Ahmed S. Mayet ◽  
Hilal Cansizoglu ◽  
Yang Gao ◽  
Ahmet Kaya ◽  
Soroush Ghandiparsi ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Top Down ◽  
Nano Scale ◽  
Surface Damages

Kinetic simulation tools for nano-scale semiconductor devices

2003 ◽  
Vol 69 (2-4) ◽  
pp. 577-586 ◽  
Author(s):  
Alex Fedoseyev ◽  
Vladimir Kolobov ◽  
Robert Arslanbekov ◽  
Andrzej Przekwas
Keyword(s):  
Semiconductor Devices ◽  
Kinetic Simulation ◽  
Simulation Tools ◽  
Nano Scale

scholarly journals Allowed Spatial Transitions and Cancellation of the Richardson-Langmuir Ban

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ordin S.V.
Keyword(s):  
Kinetic Energy ◽  
Potential Barrier ◽  
Semiconductor Devices ◽  
Energy Levels ◽  
Quantum Transition ◽  
Thermoelectric Effects ◽  
Seebeck Coefficients ◽  
Nano Scale ◽  
Classical Models ◽  
Emission Models

The ancient emission formulas of Langmuir and Richardson entered thecalculations of subtle effects in semiconductor devices as basic ones.But, in the physics of semiconductor devices, these models have longplayed a purely decorative role, since they can describe in the most roughapproximation only individual sections of the I �?V characteristic. But it isprecisely the fact that these formulas are basic when describing the barriercurrent-voltage characteristics (CVC) and prevented the consideration anduse of thermoelectric effects in materials on a nano-scale. Thus, as thesebasic emission models actually imposed a ban on the MEASURABILITYof local thermoelectric effects, the existence of which has already beenproven both phenomenologically and experimentally.The quantum transition technique is based on classical models. But itcan also be used to correct these classic formulas. The calculation of thespatial transition of electrons over the potential barrier, taking into accountthe polarity of the kinetic energy, gives currents that are significantlyhigher than the currents of Langmuir and Richardson, including in theinitial section of the I �?V characteristic. Moreover, ballistic currentsare concentrated at energy levels close to the threshold. This effectof condensation of electrons flowing down the barrier transforms the"anomalous" Seebeck coefficients into normal MEASURABLE LocalThermal EMF, including in p-n junctions.

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