scholarly journals Electrically-controlled near-field radiative thermal modulator made of graphene-coated silicon carbide plates

2017 ◽  
Vol 197 ◽  
pp. 68-75 ◽  
Author(s):  
Yue Yang ◽  
Liping Wang
Keyword(s):  
Silicon Carbide ◽  
Near Field ◽  
Thermal Modulator

Ultrafast Tunable Near-Field Radiative Thermal Modulator Made of Ge3Sb2Te6

2019 ◽  
Vol 141 (7) ◽  
Author(s):  
Lu Lu ◽  
Jinlin Song ◽  
Kun Zhou ◽  
Han Ou ◽  
Qiang Cheng ◽  
...  
Keyword(s):  
Filling Factor ◽  
Radiative Heat ◽  
Near Field ◽  
Underlying Mechanism ◽  
Modulation Effect ◽  
Special Configuration ◽  
Volume Filling ◽  
Resonance Modes ◽  
Thermal Modulator ◽  
Two Phases

We show numerically the phase change material Ge3Sb2Te6 (GST) with special configuration as a heat modulator in the regime of near-field radiative heat transfer (NFRHT). The ability of GST to allow ultrafast reversible switch between two phases endows it great potential in practical modulation application. By designing silicon carbide (SiC) nanoholes (NHs) filled with GST, this configuration could achieve a considerable modulation effect and large near-field radiative heat flux. The underlying mechanism can be explained by the observation that the entire configuration supports either hyperbolic modes or surface phonon polaritons (SPhPs) resonance modes and even the combination of both modes, thereby resulting in the remarkable modulation effect. In addition, the effects of the volume filling factor and graphene coverage are also investigated at the vacuum gap distance of 100 nm. With graphene coverage, the modulation factor can be further improved to as high as 0.72 achieved at the volume filling factor of 0.6 with temperature difference of 20 K. The proposed configuration has the potential to effectively modulate heat in the near-field regime for designing heat modulation applications in the future.

Near-Field Radiative Heat Transfer between Integrated Nanostructures using Silicon Carbide

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Raphael St-Gelais ◽  
Linxiao Zhu ◽  
Biswajeet Guha ◽  
Shanhui Fan ◽  
Michal Lipson
Keyword(s):  
Heat Transfer ◽  
Silicon Carbide ◽  
Radiative Heat Transfer ◽  
Radiative Heat ◽  
Near Field

Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide

Vacuum ◽  
2005 ◽  
Vol 79 (1-2) ◽  
pp. 94-99 ◽  
Author(s):  
T. Tsvetkova ◽  
S. Takahashi ◽  
A. Zayats ◽  
P. Dawson ◽  
R. Turner ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Optical Mapping ◽  
Near Field ◽  
Amorphous Silicon Carbide ◽  
Ion Implanted

Nanosphere-Assisted Direct-Patterning of Silicon Carbide by a Nanosecond Pulsed Laser

2005 ◽  
Author(s):  
Arvind Battula ◽  
Senthil Theppakuttai ◽  
Shanchen Chen
Keyword(s):  
Silicon Carbide ◽  
Near Field ◽  
Field Enhancement ◽  
Bulk Silicon ◽  
Direct Patterning ◽  
Atomic Force ◽  
Nanosecond Pulsed Laser ◽  
Sio2 Spheres ◽  
532 Nm ◽  
Nano Patterning

A strategy wherein the optical near-field enhancement between the spheres and substrate obtained by irradiating with laser beam is used for nano-patterning the hard-to-machine bulk silicon carbide (SiC). For this study a monolayer of silica (SiO2) spheres of 1.76 μm and 640 nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of wavelength 355 nm and 532 nm. Scanning electron microscope and atomic force microscope are used to characterize the features. It was found that the features obtained were having diameters around 150 to 450 nm and the depths varying from 70 to 220 nm.

Near-Field Radiative Heat Transfer Between Graphene/Silicon Carbide Multilayers

2018 ◽  
Vol 140 (7) ◽  
Author(s):  
Liang-Ying Zhong ◽  
Qi-Mei Zhao ◽  
Tong-Biao Wang ◽  
Tian-Bao Yu ◽  
Qing-Hua Liao ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Silicon Carbide ◽  
Radiative Heat Transfer ◽  
Radiative Heat ◽  
Chemical Potential ◽  
Effective Medium Theory ◽  
Near Field ◽  
Transfer Characteristic ◽  
Transfer Coefficients ◽  
Medium Theory

Hyperbolic metamaterial (HMM) alternately stacked by graphene and silicon carbide (SiC) is proposed to theoretically study near-field radiative heat transfer. Heat transfer coefficients (HTCs) are calculated using the effective medium theory (EMT). We observe that HMMs can exhibit better heat transfer characteristic than graphene-covered SiC bulks when appropriate SiC thickness and chemical potentials of graphene are selected. Transfer matrix method (TMM) is also employed to calculate HTC between HMMs with thicker SiC, given the invalidity of EMT in this case. We deduce that with increasing SiC thickness, HTC first increases rapidly and then decreases slowly when it reaches maximum value. HTC is high for graphene with small chemical potential. Results may benefit applications of thermophotovoltaic devices.

Prediction of Nanoscale Radiative Heat Transfer Between Silicon and Silicon or Another Material

Volume 4 ◽  
2004 ◽  
Author(s):  
Ceji Fu ◽  
Zhuomin M. Zhang
Keyword(s):  
Heat Transfer ◽  
Heat Flux ◽  
Silicon Carbide ◽  
High Temperature ◽  
Energy Flux ◽  
Doping Level ◽  
Energy Exchange ◽  
Radiative Heat ◽  
Near Field ◽  
Net Heat Flux

This work investigates the near-field radiative heat transfer between two semi-finite media separated by a vacuum gap. The fluctuational electrodynamics is used to calculate the net heat flux between a high-temperature medium, which is assumed to be silicon at 1000 K, and a room-temperature (300 K) medium, which is taken as either silicon or a different material, such as silicon carbide and aluminum. The dielectric function of silicon is modeled with a Drude model, considering the effects of temperature and doping level on the carrier concentrations and scattering rates. The calculated results show that the net radiative energy flux can be greatly enhanced in the near field. In the case of energy exchange between silicon and silicon, the net heat flux approaches to a constant value as the distance between the media is reduced to below 100 nm. Furthermore, increasing the doping level of the high-temperature medium causes a slight decrease in the near-field energy flux. On the contrary, in the case of energy exchange between silicon and a different material (silicon carbide or aluminum), the net heat flux continue to increase as the distance is reduced even below 1 nm. Increasing the doping level of silicon can significantly enhance the net energy flux, especially when the distance is shorter than 20 nm.

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