Growth of vertically aligned one-dimensional ZnO nanowire arrays on sol–gel derived ZnO thin films

2014 ◽  
Vol 75 (11) ◽  
pp. 1194-1200 ◽  
Author(s):  
Nobuaki Kitazawa ◽  
Masami Aono ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Nanowire Arrays ◽  
Zno Thin Films ◽  
Zno Nanowire ◽  
One Dimensional ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

The Growth Mechanism of Vertically Aligned ZnO Nanowire Arrays on Non-epitaxial Si(100) Substrates

2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen
Keyword(s):  
Growth Mechanism ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Tunable Photoluminescence of ZnO Nanowire Arrays via Native Defects

2020 ◽  
Vol 15 (3) ◽  
pp. 394-397
Author(s):  
Liqing Liu ◽  
Wei Ju ◽  
Yongtao Li ◽  
Xuemin He ◽  
Hongguang Zhang ◽  
...  
Keyword(s):  
Great Influence ◽  
Nanowire Arrays ◽  
Near Band Edge ◽  
Zno Nanowire ◽  
X Ray Diffraction ◽  
Photoelectric Device ◽  
Sem Image ◽  
Annealing Conditions ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Natural ZnO nanomaterials have abundant oxygen vacancies which has great influence on the physical properties. Here, the ZnO nanowire arrays (ZNAs) have been obtained using microwave heating method. These samples' photoluminescence (PL) properties were studied under different annealing conditions. The field emission scanning electron microscope (SEM) image shows that the vertically aligned ZNAs basically have the same morphology after annealing at different times. X-ray diffraction (XRD) spectra demonstrate the best crystallization when the sample was annealed at 400 °C for 2 hours. Photoluminescence pattern indicates that the near-band-edge (NBE) emission is stronger with increasing annealing times, however, the defect-related emission decreases with the annealing times. This result indicates that crystallization of ZnO nanowires can be improved and the defects can decrease by annealing and the crystallization of the sample is wonderful at 400 °C for 2 h annealing. Meanwhile, adjusting photoluminescence characterizes through annealing can provide the basis for application of ZnO in photoelectric device.

Solution-derived 40 µm vertically aligned ZnO nanowire arrays as photoelectrodes in dye-sensitized solar cells

2010 ◽  
Vol 21 (19) ◽  
pp. 195602 ◽  
Author(s):  
Jijun Qiu ◽  
Xiaomin Li ◽  
Fuwei Zhuge ◽  
Xiaoyan Gan ◽  
Xiangdong Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Dye Sensitized ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned ◽  
Sensitized Solar Cells
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