scholarly journals Erratum: “Tuning optical band gap of vertically aligned ZnO nanowire arrays grown by homoepitaxial electrodeposition” [Appl. Phys. Lett. 90, 103107 (2007)]

2007 ◽  
Vol 90 (16) ◽  
pp. 169902
Author(s):  
Savarimuthu Philip Anthony ◽  
Jeong In Lee ◽  
Jin Kon Kim
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

The Growth Mechanism of Vertically Aligned ZnO Nanowire Arrays on Non-epitaxial Si(100) Substrates

2011 ◽  
Vol 58 (6) ◽  
pp. 817-821 ◽  
Author(s):  
Yu-Tung Yin ◽  
Yen-Zhi Chen ◽  
Ching-Hsiang Chen ◽  
Liang-Yih Chen
Keyword(s):  
Growth Mechanism ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Tunable Photoluminescence of ZnO Nanowire Arrays via Native Defects

2020 ◽  
Vol 15 (3) ◽  
pp. 394-397
Author(s):  
Liqing Liu ◽  
Wei Ju ◽  
Yongtao Li ◽  
Xuemin He ◽  
Hongguang Zhang ◽  
...  
Keyword(s):  
Great Influence ◽  
Nanowire Arrays ◽  
Near Band Edge ◽  
Zno Nanowire ◽  
X Ray Diffraction ◽  
Photoelectric Device ◽  
Sem Image ◽  
Annealing Conditions ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Natural ZnO nanomaterials have abundant oxygen vacancies which has great influence on the physical properties. Here, the ZnO nanowire arrays (ZNAs) have been obtained using microwave heating method. These samples' photoluminescence (PL) properties were studied under different annealing conditions. The field emission scanning electron microscope (SEM) image shows that the vertically aligned ZNAs basically have the same morphology after annealing at different times. X-ray diffraction (XRD) spectra demonstrate the best crystallization when the sample was annealed at 400 °C for 2 hours. Photoluminescence pattern indicates that the near-band-edge (NBE) emission is stronger with increasing annealing times, however, the defect-related emission decreases with the annealing times. This result indicates that crystallization of ZnO nanowires can be improved and the defects can decrease by annealing and the crystallization of the sample is wonderful at 400 °C for 2 h annealing. Meanwhile, adjusting photoluminescence characterizes through annealing can provide the basis for application of ZnO in photoelectric device.

Solution-derived 40 µm vertically aligned ZnO nanowire arrays as photoelectrodes in dye-sensitized solar cells

2010 ◽  
Vol 21 (19) ◽  
pp. 195602 ◽  
Author(s):  
Jijun Qiu ◽  
Xiaomin Li ◽  
Fuwei Zhuge ◽  
Xiaoyan Gan ◽  
Xiangdong Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Dye Sensitized ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned ◽  
Sensitized Solar Cells

Growth of vertically aligned ZnO nanowire arrays on ZnO single crystals

2015 ◽  
Vol 154 ◽  
pp. 40-43 ◽  
Author(s):  
Chengchun Zhao ◽  
Anqi Chen ◽  
Xu Ji ◽  
Yuan Zhu ◽  
Xuchun Gui ◽  
...  
Keyword(s):  
Single Crystals ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector

2012 ◽  
Vol 107 (2) ◽  
pp. 255-260 ◽  
Author(s):  
Xianghui Zhang ◽  
Xiangyun Han ◽  
Jun Su ◽  
Qi Zhang ◽  
Yihua Gao
Keyword(s):  
Recovery Time ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Fast Recovery ◽  
Uv Photodetector ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned

Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3414-3419 ◽  
Author(s):  
Yaguang Wei ◽  
Wenzhuo Wu ◽  
Rui Guo ◽  
Dajun Yuan ◽  
Suman Das ◽  
...  
Keyword(s):  
High Throughput ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Wafer Scale ◽  
Zno Nanowire Arrays ◽  
Vertically Aligned
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