In-situ current–voltage characteristics of the n+-type GaAs substrate in HF:Et-OH electrolyte

2007 ◽  
Vol 68 (1) ◽  
pp. 36-40 ◽  
Author(s):  
L. Beji ◽  
Z. Mazouz ◽  
A. Othmane ◽  
H. Ben Ouada
Keyword(s):  
Gaas Substrate ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface

1992 ◽  
Vol 281 ◽  
Author(s):  
X. W. Lin ◽  
Z. Liliental-Weber ◽  
W. Swider ◽  
T. McCants ◽  
N. Newman ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Current Voltage ◽  
Higher Temperature ◽  
Amorphous Interlayer

ABSTRACTUsing current-voltage measurements and high-resolution electron microscopy (HREM), we have studied the electrical and structural properties of Ti contacts on an atomically clean n-type GaAs (110) surface. The Ti/n-GaAs diodes are formed at room temperature in ultrahigh vacuum and in situ isochronally (10 min) annealed at temperatures ranging from 200 to 450°C. We find that the Schottky barrier height of the diodes increases by ≈0.10 eV upon annealing at 200°C and remains basically stable for higher-temperature anneals. HREM investigation reveals that Ti reacts with GaAs in its as-deposited state to form an amorphous interlayer ≈1.5 nm thick. After anneals to 450°C, extensive reactions occur at the interface, resulting in the formation of a layered structure Ti/Ga3Ti2/TiAs/GaAs, with TiAs protruding into the GaAs substrate.

A novel n+-polysilicon on n-silicon iso-type diode

1996 ◽  
Vol 74 (S1) ◽  
pp. 186-188
Author(s):  
S. Mohajerzadeh ◽  
C. R. Selvakumar
Keyword(s):  
Energy Barrier ◽  
Exponential Behavior ◽  
Si Substrates ◽  
Current Voltage ◽  
Polysilicon Films ◽  
Current Voltage Characteristics ◽  
Film Substrate ◽  
Phosphorus Doped

We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE

2013 ◽  
Vol 27 (16) ◽  
pp. 1350122 ◽  
Author(s):  
EVAN T. SALIM ◽  
MARWA S. AL WAZNY ◽  
MAKRAM A. FAKHRY
Keyword(s):  
Crystalline Silicon ◽  
Silicon Substrates ◽  
In Situ Oxidation ◽  
Current Voltage ◽  
Glancing Angle ◽  
Heterojunction Device ◽  
Oxide Particles ◽  
Current Voltage Characteristics ◽  
P Type

Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n- Bi 2 O 3/p- Si heterojunction device was investigated. The obtained current–voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I–V characteristics show that all prepared devices are of abrupt type.

Current−Voltage Characteristics of in Situ Graphitization of Hydrocarbon Coated on ZnSe Nanowire

2010 ◽  
Vol 114 (30) ◽  
pp. 12839-12849 ◽  
Author(s):  
Y. G. Wang ◽  
M. X. Xia ◽  
B. S. Zou ◽  
T. H. Wang ◽  
W. Han ◽  
...  
Keyword(s):  
Current Voltage ◽  
Current Voltage Characteristics

Piezoresistivity of conducting polyaniline/BaTiO3 composites

2001 ◽  
Vol 16 (7) ◽  
pp. 1982-1988 ◽  
Author(s):  
R. C. Patil ◽  
S. Radhakrishnan ◽  
Sushama Pethkar ◽  
K. Vijaymohanan
Keyword(s):  
Charge Transport ◽  
Transport Process ◽  
Polymerization Reaction ◽  
Charge Transport Mechanism ◽  
Conducting Material ◽  
Large Hysteresis ◽  
Current Voltage ◽  
Conducting Polyaniline ◽  
Current Voltage Characteristics

Conducting polyaniline/barium titanate (PANI/BaTiO3) composites exhibiting piezoresistivity properties have been synthesized by the in situ deposition technique by placing a fine grade powder of BaTiO3 in the polymerization reaction mixture. The polyaniline was formed preferentially on the ceramic particles giving a much higher yield for PANI than in absence of the BaTiO3 These composites exhibited piezoresistivity with the piezosensitivity being maximum at a certain composition. The current–voltage characteristics clearly revealed a nonlinear space charge controlled charge transport process. A large hysteresis in these characteristics was also observed which was dependent on the BaTiO3 content in a composite. The various results have been explained on the basis of the charge transport mechanism in the heterogeneous conducting material having insulating domains dispersed in it.

scholarly journals Study of the charge transfer process in the polyaniline/graphite heterojunction by conductive atomic force microscopy

2020 ◽  
pp. 94-98
Author(s):  
N. A. Davletkildeev ◽  
Keyword(s):  
Atomic Force Microscopy ◽  
Oxidative Polymerization ◽  
Pyrolytic Graphite ◽  
Thin Layers ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics

Thin layers of polyaniline on the surface of highly oriented pyrolytic graphite are obtained by in-situ chemical oxidative polymerization of aniline. The current-voltage characteristics of the tip/polyaniline/graphite contact, which have a form characteristic of tunnel contacts, have been measured by the method of conducting atomic force microscopy. By modeling the current-voltage characteristics using the Simmons model, the width of the potential barrier is determined, which for the investigated heterojunction is 0,5 nm

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