Switching characteristics of magnetic tunnel junction with amorphous CoFeSiB free layer

2006 ◽  
Vol 304 (1) ◽  
pp. e276-e278 ◽  
Author(s):  
J.Y. Hwang ◽  
S.S. Kim ◽  
M.Y. Kim ◽  
J.R. Rhee ◽  
B.S. Chun ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Switching Characteristics

Effect of the stray field profile on the switching characteristics of the free layer in a perpendicular magnetic tunnel junction

2015 ◽  
Vol 117 (17) ◽  
pp. 17B721 ◽  
Author(s):  
Huang Jiancheng ◽  
Sim Cheow Hin ◽  
Vinayak Bharat Naik ◽  
Michael Tran ◽  
Lim Sze Ter ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Stray Field ◽  
Field Profile ◽  
Free Layer ◽  
Switching Characteristics

The switching characteristics of free layer of patterned magnetic tunnel junction device

2006 ◽  
Vol 304 (1) ◽  
pp. e285-e287
Author(s):  
C.C. Chen ◽  
Y.R. Wang ◽  
C.Y. Kuo ◽  
J.C. Wu ◽  
Lance Horng ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Junction Device ◽  
Switching Characteristics

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Thermal Noise ◽  
Wall Motion ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Motion ◽  
Spin Orbit ◽  
Free Layer ◽  
Digit Recognition ◽  
Transport Studies

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.

scholarly journals Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

2020 ◽  
Author(s):  
Marco Mansueto ◽  
Antoine Chavent ◽  
Ricardo Sousa ◽  
Liliana D. Buda-Prejbeanu ◽  
Ioan L. Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer

Compensation of orange-peel coupling effect in magnetic tunnel junction free layer via shape engineering for nanomagnet logic applications

2014 ◽  
Vol 115 (17) ◽  
pp. 17B902 ◽  
Author(s):  
Faisal A. Shah ◽  
Vijay K. Sankar ◽  
Peng Li ◽  
Gyorgy Csaba ◽  
Eugene Chen ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Coupling Effect ◽  
Magnetic Tunnel Junction ◽  
Orange Peel ◽  
Free Layer ◽  
Nanomagnet Logic

scholarly journals Fabrication of soft-magnetic FeAlSi thin films with nm-order thickness for the free layer of magnetic tunnel junction based sensors

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015302
Author(s):  
Shoma Akamatsu ◽  
Mikihiko Oogane ◽  
Masakiyo Tsunoda ◽  
Yasuo Ando
Keyword(s):  
Thin Films ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Soft Magnetic

Relation between exchange coupling and enhanced coercivity in the free layer of a patterned magnetic tunnel junction

2004 ◽  
Vol 96 (12) ◽  
pp. 7399-7402 ◽  
Author(s):  
CheolGi Kim ◽  
Chong-Oh Kim ◽  
Masakiyo Tsunoda ◽  
Migaku Takahashi ◽  
Tomasz Stobiecki
Keyword(s):  
Tunnel Junction ◽  
Exchange Coupling ◽  
Magnetic Tunnel Junction ◽  
Free Layer
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