Formation of highly porous electrochemically etched silicon carbide: A novel reusable adsorbent for air purification technology

2019 ◽  
Vol 218 ◽  
pp. 521-528
Author(s):  
Jaganathan Senthilnathan ◽  
Ambika Selvaraj ◽  
Jechan Lee ◽  
Ki-Hyun Kim ◽  
Masahiro Yoshimura
Keyword(s):  
Silicon Carbide ◽  
Air Purification ◽  
Etched Silicon ◽  
Highly Porous

Sputter‐etched Silicon Carbide by AES

1994 ◽  
Vol 3 (3) ◽  
pp. 182-186
Author(s):  
June M. Epp
Keyword(s):  
Silicon Carbide ◽  
Etched Silicon

Auger electron spectroscopy study of reactive ion etched silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study ◽  
Etched Silicon

Fabrication and properties of ultra highly porous silicon carbide by the gelation–freezing method

2010 ◽  
Vol 30 (14) ◽  
pp. 2889-2896 ◽  
Author(s):  
Manabu Fukushima ◽  
Masayuki Nakata ◽  
You Zhou ◽  
Tatsuki Ohji ◽  
Yu-ichi Yoshizawa
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Porous Silicon Carbide ◽  
Freezing Method ◽  
Highly Porous

scholarly journals Buckling Porous SiC Membranes

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 785
Author(s):  
Markus Leitgeb ◽  
Christopher Zellner ◽  
Manuel Dorfmeister ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Design Concepts ◽  
Photochemical Etching ◽  
Potential Applications ◽  
Etching Parameters ◽  
Porous Sic ◽  
Highly Porous

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.

Formation of highly-porous ceramic based on silicon carbide

1995 ◽  
Vol 33 (5-6) ◽  
pp. 262-267
Author(s):  
G. G. Gnesin ◽  
L. A. Shipilova ◽  
L. I. Chernyshev ◽  
V. Loikovskii ◽  
A. Prez
Keyword(s):  
Silicon Carbide ◽  
Porous Ceramic ◽  
Highly Porous

scholarly journals The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide

2015 ◽  
Vol 821-823 ◽  
pp. 970-973
Author(s):  
Jeanette Hvam ◽  
Per Morgen ◽  
Terence Edwin Warner ◽  
Eivind Morten Skou ◽  
Thomas Wolff
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Particulate Filter ◽  
High Porosity ◽  
Sintering Process ◽  
Diesel Particulate ◽  
High Temperature Reaction ◽  
Ternary Carbides ◽  
Highly Porous

Aluminium is found to play a key role in the process of forming a mechanically stable and highly porous and granular structure of 4H silicon carbide. The material is prepared by a high temperature reaction of the elemental constituents. The reactions are carried out under different background atmospheres, including nitrogen. Ternary carbides containing Al, Si and N, are formed in the process, and are believed to be responsible for the final outcome of the process, at the highest reaction temperatures, in the form of pure, well-connected grains of 4H-SiC forming a strong and rigid structure with high porosity. The Al containing compounds function as structural promoters for the 4H polytype recrystallization. This is expected - and partly shown - to take place through substitution with 4H-SiC and evaporation of all other constituents during the high temperature sintering step. When extruded into honeycomb structures prior to the sintering process this pure mesoporous SiC final product turns out to be ideal for a combined diesel particulate filter with support for catalysts in the pores.

Mechanical and thermal resistance of catalyst carriers based on a highly porous silicon carbide ceramic

1996 ◽  
Vol 35 (11-12) ◽  
pp. 600-603
Author(s):  
Yu. P. Dyban' ◽  
L. A. Shipilova ◽  
G. V. Ippolitova ◽  
V. A. Goncharuk ◽  
I. V. Goncharova
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Thermal Resistance ◽  
Porous Silicon Carbide ◽  
Silicon Carbide Ceramic ◽  
Highly Porous ◽  
Catalyst Carriers
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