scholarly journals Temperature dependence of electric-field-induced domain switching in 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 single crystal

2012 ◽  
Vol 527 ◽  
pp. 101-105 ◽  
Author(s):  
Zhu Wang ◽  
Rui Zhang ◽  
Enwei Sun ◽  
Wenwu Cao
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Domain Switching

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Permittivity and Microstructure of (Ba,Sr)TiO3 Films: Temperature and Electric Field Response

1999 ◽  
Vol 603 ◽  
Author(s):  
Yu.A. Boikov ◽  
T. Claeson ◽  
Z. Ivanov ◽  
E. Olsson
Keyword(s):  
Phase Transition ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Transition Point ◽  
Phase Transition Point ◽  
Bulk Single Crystal ◽  
Temperature Range ◽  
Field Response

AbstractEpitaxial heterostructures (001)(Y,Nd)Ba2Cu3O7-δ∥(100)SrTiO3∥(001)(Nd,Y)Ba2Cu3O7-δ,(100)SrRuO3∥(100)Ba0.8Sr0.2TiO3∥(100)SrRuO3, (100)SrRuO3∥(100)SrTiO3∥(100)SrRuO3 and (100)SrTiO3∥(001)YBa2Cu3O7-δ have been grown by laser ablation. There was only a small difference of the dielectric permittivity, in the temperature range 180-300K, between a bulk single crystal and an epitaxial (100)SrTiO3 layer inserted between either high-Tc superconducting or SrRuO3 electrodes. At T<1 50K, on the other hand, the response of the dielectric permittivity of the SrTiO3 layer on temperature or electric field depended to a large extent upon the materials used as bottom and top electrodes in the heterostructures. The temperature dependence of the dielectric permittivity for the SrTiO3 layer in (100)SrRuO3∥(100)SrTiO3∥(100)SrRuO3 was well extrapolated by a Curie-Weiss relation in the range of T=80-300K, with about the same Curie constant (C0=7.5 × 104 K) and Curie temperature (TCurie=21K) as in a bulk single crystal. At temperatures higher the phase transition point (65 K), the electric field response of the permittivity of the SrTiO3 layer between high-TC superconducting or metallic oxide electrodes was well extrapolated by the same relation used for a bulk single crystal. The smallest loss factor, tanδ, was measured for the capacitance (100)SrRuO3∥(100)SrTiO3∥(100)SrRuO3 (T ≈ 50-300K, f=100kHz). The measured conductance G for the SrTiO3 layer in the (001)(Y,Nd)Ba2Cu3O7-δ heterostructure fitted well the relation InG∼-(ED/kT), with ED=0.08-0.09 eV in a temperature range close to 300K. Pronounced hysteresis was observed in the temperature dependence of the dielectric permittivity for the (100)Ba0.8Sr0.2TiO3 layer at temperatures close to the phase transition point, like in the case of a bulk single crystal. The permittivity of the (100)Ba0.8Sr0.2TiO3 layer decreased more than 50% when an electric field of 2.5×106V/m (T ≈ 300K, f=100 kHz ) was applied.

Direct observation of two 90° steps of 180° domain switching in BaTiO3 single crystal under an antiparallel electric field

2008 ◽  
Vol 93 (15) ◽  
pp. 152905 ◽  
Author(s):  
Bing Jiang ◽  
Yang Bai ◽  
Wuyang Chu ◽  
Yanjing Su ◽  
Lijie Qiao
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Direct Observation ◽  
Domain Switching
Sign in / Sign up

Export Citation Format

Share Document