Effect of high-temperature preoxidation treatment on the low-temperature oxidation behavior of a MoSi2-based composite at 500°C

2009 ◽  
Vol 473 (1-2) ◽  
pp. 185-189 ◽  
Author(s):  
Peizhong Feng ◽  
Xiaohong Wang ◽  
Yaqiong He ◽  
Yinghuai Qiang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Oxidation Behavior ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Effect of NaOH Treatment on the Low-Temperature Oxidation Behavior of Lignite

2019 ◽  
Vol 33 (9) ◽  
pp. 9161-9170 ◽  
Author(s):  
Yongyu Wang ◽  
Sheng Xue ◽  
Yibo Tang ◽  
Fuding Mei ◽  
Wei He ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxidation Behavior ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Naoh Treatment

Impact of Polycrystalline Silicon Processing on Properties of MOS Memory Devices

1990 ◽  
Vol 182 ◽  
Author(s):  
G. Queirolo ◽  
M. Brambilla ◽  
C. Mavero
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Breakdown Field ◽  
Memory Devices ◽  
High Temperature Annealing ◽  
High Fluence ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Interpoly Oxide

AbstractIn EEPROMs mèmory devices, tunnel oxides with high fluence, and interpoly oxides with low conductivity and high breakdown field are needed. Tunnel oxide fluence is degraded by high temperature annealing after the polysilicon deposition, while interpoly oxide is degraded by low temperature oxidation, particularly on rough films. As a consequence, a process optimization, giving a good compromise between these two quantities is required. In this work we shown that if a flat polysilicon is used, an interpoly oxide of good quality can be obtained at low temperature, maintaining a high value for the tunnel oxide fluence.

scholarly journals Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

2020 ◽  
Vol 13 (9) ◽  
pp. 091003 ◽  
Author(s):  
Takuma Kobayashi ◽  
Takafumi Okuda ◽  
Keita Tachiki ◽  
Koji Ito ◽  
Yu-ichiro Matsushita ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Low temperature oxidation behavior of Mo2BC coatings

2020 ◽  
Vol 38 (2) ◽  
pp. 023403
Author(s):  
Jan-Ole Achenbach ◽  
Soheil Karimi Aghda ◽  
Marcus Hans ◽  
Daniel Primetzhofer ◽  
Damian M. Holzapfel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxidation Behavior ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Construction of a macromolecular structural model of Chinese lignite and analysis of its low-temperature oxidation behavior

2017 ◽  
Vol 25 (9) ◽  
pp. 1314-1321 ◽  
Author(s):  
Xianliang Meng ◽  
Mingqiang Gao ◽  
Ruizhi Chu ◽  
Zhenyong Miao ◽  
Guoguang Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxidation Behavior ◽  
Structural Model ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Growth of Single Crystals and Low Temperature Oxidation Behaviors of MoSi2 and NbSi2

2005 ◽  
Vol 475-479 ◽  
pp. 729-732 ◽  
Author(s):  
Fang Zhang ◽  
Lan Ting Zhang ◽  
Jin Xing Yu ◽  
Jian Sheng Wu
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Oxidation Behavior ◽  
Weight Changes ◽  
Low Temperature Oxidation ◽  
Zone Method ◽  
Temperature Oxidation ◽  
Single Crystalline ◽  
Optical Heating ◽  
Spark Plasma

In this paper, single crystals, around 8mm in diameter, of MoSi2 and NbSi2 have been grown by optical heating floating zone method. X-ray analysis confirmed that the as-grown ingots were single phase and single crystalline material. Oxidation behavior of the poly-crystalline and single crystalline MoSi2 and NbSi2 were characterized by measuring their weight changes as a function of exposure time. For arc-melted poly-crystalline samples, MoSi2 and NbSi2 fully turned into white powders after 160 and 3hrs exposure at 773K and 1023K respectively, which is known as the “pesting” phenomenon. As a comparison, no pesting was found in the dense spark plasma sintered (SPS) poly-crystalline samples and single crystals. The weight change of single crystals during exposure is found to be much lower than that of the SPS sample, indicating grain boundary plays an important role in the low temperature oxidation behavior of these two silicides.

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