Real-time analysis of a surface phase transition of GaAs (001) by core-level photoelectron spectroscopy and photoelectron diffraction

2004 ◽  
Vol 137-140 ◽  
pp. 107-112 ◽  
Author(s):  
Fumihiko Maeda ◽  
Yoshio Watanabe
1997 ◽  
Vol 78 (22) ◽  
pp. 4233-4236 ◽  
Author(s):  
Fumihiko Maeda ◽  
Yoshio Watanabe ◽  
Masaharu Oshima

1993 ◽  
Vol 281 (3) ◽  
pp. 178-179
Author(s):  
T.T. Tran ◽  
S. Thevuthasan ◽  
Y.J. Kim ◽  
D.J. Friedman ◽  
A.P. Kaduwela ◽  
...  

1993 ◽  
Vol 281 (3) ◽  
pp. 270-284 ◽  
Author(s):  
T.T. Tran ◽  
S. Thevuthasan ◽  
Y.J. Kim ◽  
D.J. Friedman ◽  
A.P. Kaduwela ◽  
...  

1998 ◽  
Vol 5 (3) ◽  
pp. 1026-1028 ◽  
Author(s):  
Fumihiko Maeda ◽  
Yoshio Watanabe ◽  
Masaharu Oshima ◽  
Masami Taguchi ◽  
Retsu Oiwa

A system has been developed for the real-time analysis of surface reactions during molecular beam epitaxial growth which uses photoelectron spectroscopy with VUV light taken from synchrotron radiation. This system consists of a synchrotron radiation beamline and growth/analysis apparatus in which photoelectron spectroscopy is performed with sub-second time resolution. In this system, photoelectron spectra are measured in sequence by a `non-scanning' measurement method that enables the acquisition of snapshot photoelectron spectra using a multi-channel detector. This non-scanning measurement method was enabled by equipping an electric field correction grid. This system was used to monitor the photoelectron spectra of a GaSb(001) surface.


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