In-situ grown Li-Ti-O layer derived by atomic layer deposition to improve the Li storage performance of Li2TiSiO5 anode materials

2020 ◽  
Vol 344 ◽  
pp. 136149 ◽  
Author(s):  
Yueni Mei ◽  
Songtao Guo ◽  
Yingjun Jiang ◽  
Fuyun Li ◽  
Yaqian Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Anode Materials ◽  
Atomic Layer ◽  
Storage Performance ◽  
Layer Deposition ◽  
Li Storage

In situ nitrogen doping of TiO2 by plasma enhanced atomic layer deposition for enhanced sodium storage performance

2017 ◽  
Vol 46 (38) ◽  
pp. 13101-13107 ◽  
Author(s):  
Jinhuan Lin ◽  
Dingtao Ma ◽  
Yongliang Li ◽  
Peixin Zhang ◽  
Hongwei Mi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Nitrogen Doping ◽  
Atomic Layer ◽  
Nitrogen Doped ◽  
Storage Performance ◽  
Layer Deposition ◽  
Sodium Storage

Nitrogen-doped TiO2 is in situ synthesized by plasma enhanced atomic layer deposition on carbon nanotubes (N-TiO2/CNTs).

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

scholarly journals In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 14567-14574 ◽  
Author(s):  
Mantu K. Hudait ◽  
Michael B. Clavel ◽  
Jheng-Sin Liu ◽  
Shuvodip Bhattacharya
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition
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