scholarly journals Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction

2019 ◽  
Vol 98 ◽  
pp. 73-77 ◽  
Author(s):  
V. Di Palma ◽  
G. Zafeiropoulos ◽  
T. Goldsweer ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cobalt Phosphate

scholarly journals Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Linxing Meng ◽  
Jinlu He ◽  
Xiaolong Zhou ◽  
Kaimo Deng ◽  
Weiwei Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Energy Band ◽  
High Performance ◽  
Carrier Transport ◽  
Atomic Layer ◽  
Onset Potential ◽  
Layer Deposition ◽  
Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

Self-terminated electrodeposition of iridium electrocatalysts

2015 ◽  
Vol 8 (12) ◽  
pp. 3557-3562 ◽  
Author(s):  
Sang Hyun Ahn ◽  
Haiyan Tan ◽  
Mareike Haensch ◽  
Yihua Liu ◽  
Leonid A. Bendersky ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Electrocatalytic Activity ◽  
Oxidation Reaction ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

This study details a “wet” atomic layer deposition process that uses potential modulation and H adsorption to terminate Ir deposition at high deposition overpotentials. The ultrathin Ir films match or exceed the best reported electrocatalytic activity for the oxygen evolution reaction (OER) and hydrogen production and oxidation reaction (HER and HOR) on bulk Ir electrodes.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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