Degradation of profenofos in an electrochemical flow reactor using boron-doped diamond anodes

2013 ◽  
Vol 32 ◽  
pp. 54-60 ◽  
Author(s):  
G.S. Cordeiro ◽  
R.S. Rocha ◽  
R.B. Valim ◽  
F.L. Migliorini ◽  
M.R. Baldan ◽  
...  
Keyword(s):  
Flow Reactor ◽  
Boron Doped Diamond ◽  
Boron Doped

A membrane-based electrochemical flow reactor for generation of ferrates at near neutral pH conditions

2019 ◽  
Vol 4 (6) ◽  
pp. 1116-1125 ◽  
Author(s):  
Macarena A. Cataldo-Hernández ◽  
Arman Bonakdarpour ◽  
Joseph T. English ◽  
Madjid Mohseni ◽  
David P. Wilkinson
Keyword(s):  
Flow Reactor ◽  
Boron Doped Diamond ◽  
Neutral Ph ◽  
Boron Doped ◽  
Ph Conditions ◽  
Reactor Operating ◽  
Neutral Conditions

We report the electrosynthesis of Fe(vi) in a flow reactor operating in batch recirculation mode at neutral conditions using boron doped diamond (BDD) and Fe(iii).

scholarly journals Removal of the drug procaine from acidic aqueous solutions using a flow reactor with a boron-doped diamond anode

2019 ◽  
Vol 216 ◽  
pp. 65-73 ◽  
Author(s):  
Nathalia M.P. Queiroz ◽  
Ignasi Sirés ◽  
Carmem L.P.S. Zanta ◽  
Josealdo Tonholo ◽  
Enric Brillas
Keyword(s):  
Aqueous Solutions ◽  
Flow Reactor ◽  
Boron Doped Diamond ◽  
Boron Doped

Electrochemical combustion of herbicide mecoprop in aqueous medium using a flow reactor with a boron-doped diamond anode

Chemosphere ◽  
2006 ◽  
Vol 64 (6) ◽  
pp. 892-902 ◽  
Author(s):  
Cristina Flox ◽  
Pere Lluís Cabot ◽  
Francesc Centellas ◽  
José Antonio Garrido ◽  
Rosa María Rodríguez ◽  
...  
Keyword(s):  
Aqueous Medium ◽  
Flow Reactor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Electrochemical Combustion

Solar photoelectro-Fenton degradation of cresols using a flow reactor with a boron-doped diamond anode

2007 ◽  
Vol 75 (1-2) ◽  
pp. 17-28 ◽  
Author(s):  
C FLOX ◽  
P CABOT ◽  
F CENTELLAS ◽  
J GARRIDO ◽  
R RODRIGUEZ ◽  
...  
Keyword(s):  
Flow Reactor ◽  
Boron Doped Diamond ◽  
Boron Doped

Electrochemical degradation of bisphenol A using a flow reactor with a boron-doped diamond anode

2012 ◽  
Vol 198-199 ◽  
pp. 282-288 ◽  
Author(s):  
Gabriel F. Pereira ◽  
Romeu C. Rocha-Filho ◽  
Nerilso Bocchi ◽  
Sonia R. Biaggio
Keyword(s):  
Bisphenol A ◽  
Flow Reactor ◽  
Electrochemical Degradation ◽  
Boron Doped Diamond ◽  
Boron Doped

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode
Keyword(s):  
Aqueous Solutions ◽  
Boron Doped Diamond ◽  
Bdd Electrode ◽  
Boron Doped

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

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