Effect of surface defects by RF oxygen plasma on the electrical properties of thin boron-doped diamond layers in electrolyte

2011 ◽  
Vol 20 (8) ◽  
pp. 1250-1254 ◽  
Author(s):  
J. Scharpf ◽  
A. Denisenko ◽  
C. Pietzka ◽  
E. Kohn
Keyword(s):  
Electrical Properties ◽  
Oxygen Plasma ◽  
Surface Defects ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Of Surface

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

1990 ◽  
Vol 11 (2) ◽  
pp. 100-102 ◽  
Author(s):  
S.A. Grot ◽  
G.S. Gildenblat ◽  
C.W. Hatfield ◽  
C.R. Wronski ◽  
A.R. Badzian ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Treatment ◽  
Diamond Film ◽  
Metal Contacts ◽  
Boron Doped ◽  
Effect Of Surface

Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

2008 ◽  
Vol 1 ◽  
pp. 035003 ◽  
Author(s):  
Pierre Muret ◽  
Julien Pernot ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
Keyword(s):  
Surface Defects ◽  
Schottky Diodes ◽  
Boron Doped Diamond ◽  
Near Surface ◽  
Boron Doped

scholarly journals Studies on optical transmittance of boron-doped nanocrystalline diamond films

2018 ◽  
Vol 10 (3) ◽  
pp. 88 ◽  
Author(s):  
Aleksandra Wieloszynska ◽  
Robert Bogdanowicz
Keyword(s):  
Electrical Properties ◽  
Silica Glass ◽  
Diamond Films ◽  
Fused Silica ◽  
Nanocrystalline Diamond ◽  
Optical And Electrical Properties ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Nanocrystalline Diamond Films ◽  
Fused Silica Glass

Thickness is one of the most important parameters in many applications using thin layers. This article describes determination of the thickness of boron-doped nanocrystalline diamond (NCD) grown on fused silica glass. The spectroscopic measurement system has been used. A high refractive index (2.3 @ 550 nm) was achieved for NCD films. The thickness of the NCD samples has been determined from transmission spectrum. Full Text: PDF ReferencesZ. Li, S. Butun, K. Aydin, 'Large-area, lithography-free super absorbers and color filters at visible frequencies using ultrathin metallic films', ACS Photonics, vol. 2.2, pp. 183-188 2015. CrossRef L. Yu, D.D. Tune, C.J. Shearer, J.G. Shapter, 'Implementation of antireflection layers for improved efficiency of carbon nanotube–silicon heterojunction solar cells', Solar Energy, vol. 118, pp. 592-599, 2015. CrossRef D. Majchrowicz, Daria, et al., Nitrogen-Doped Diamond Film for Optical Investigation of Hemoglobin Concentration, Materials, vol. 11.1, pp. 109, 2018. CrossRef K.L. Konnerth, F.H. Dill, 'In-situ measurement of dielectric thickness during etching or developing processes', IEEE Transactions on Electron Devices, vol. 22.7, pp. 452-456, 1975. CrossRef Z.G. Hu, P. Prunici, P. Hess, K.H. Chen, 'Optical properties of nanocrystalline diamond films from mid-infrared to ultraviolet using reflectometry and ellipsometry', Journal of Materials Science: Materials in Electronics, vol. 18.1, pp. 37-41, 2007. CrossRef J. Adamczewska, et al., 'Procesy technologiczne w elektronice półprzewodnikowej', WNT, Warsaw, 1980.J.P. Dilger, L. R. Fisher, D. A. Haydon, 'A critical comparison of electrical and optical methods for bilayer thickness determination', Chemistry and Physics of Lipids, vol. 30.2-3, pp. 159-176, 1982. CrossRef M, Ficek, et al, 'Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates', Applied Surface Science, vol. 387, pp. 846-856, 2016. CrossRef R. Bogdanowicz, et al, 'Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film', J. Opt. Soc. Korea, vol. 19, pp. 705-710, 2015. CrossRef M. Sobaszek, et al., 'Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes', Optical Materials, vol.42, pp. 24-34, 2015. CrossRef R. Bogdanowicz, et al, 'Improved surface coverage of an optical fibre with nanocrystalline diamond by the application of dip-coating seeding', Diamond and Related Materials, vol. 55, pp. 52-63, 2015. CrossRef Z.G. Hu, P. Hess, 'Optical constants and thermo-optic coefficients of nanocrystalline diamond films at 30–500oC', Applied physics letters, vol. 89.8: 081906, 2006. CrossRef

Fabrication of Vertically Aligned Diamond Whiskers from Highly Boron-Doped Diamond by Oxygen Plasma Etching

2011 ◽  
Vol 3 (2) ◽  
pp. 177-182 ◽  
Author(s):  
Chiaki Terashima ◽  
Kazuki Arihara ◽  
Sohei Okazaki ◽  
Tetsuya Shichi ◽  
Donald A. Tryk ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Oxygen Plasma ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Oxygen Plasma Etching ◽  
Vertically Aligned

Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

1992 ◽  
Vol 242 ◽  
Author(s):  
J.W. Glesener ◽  
A.A. Morrish ◽  
K.A. Snail
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Turbulent Flame ◽  
Boron Doped Diamond ◽  
Acceptor Concentration ◽  
Boron Doped ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

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