Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

2016 ◽  
Vol 387 ◽  
pp. 846-856 ◽  
Author(s):  
M. Ficek ◽  
M. Sobaszek ◽  
M. Gnyba ◽  
J. Ryl ◽  
Ł. Gołuński ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Silica Glass ◽  
Fused Silica ◽  
Optical And Electrical Properties ◽  
Boron Doped Diamond ◽  
Glass Substrates ◽  
Conductive Films ◽  
Boron Doped ◽  
Fused Silica Glass

scholarly journals Studies on optical transmittance of boron-doped nanocrystalline diamond films

2018 ◽  
Vol 10 (3) ◽  
pp. 88 ◽  
Author(s):  
Aleksandra Wieloszynska ◽  
Robert Bogdanowicz
Keyword(s):  
Electrical Properties ◽  
Silica Glass ◽  
Diamond Films ◽  
Fused Silica ◽  
Nanocrystalline Diamond ◽  
Optical And Electrical Properties ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Nanocrystalline Diamond Films ◽  
Fused Silica Glass

Thickness is one of the most important parameters in many applications using thin layers. This article describes determination of the thickness of boron-doped nanocrystalline diamond (NCD) grown on fused silica glass. The spectroscopic measurement system has been used. A high refractive index (2.3 @ 550 nm) was achieved for NCD films. The thickness of the NCD samples has been determined from transmission spectrum. Full Text: PDF ReferencesZ. Li, S. Butun, K. Aydin, 'Large-area, lithography-free super absorbers and color filters at visible frequencies using ultrathin metallic films', ACS Photonics, vol. 2.2, pp. 183-188 2015. CrossRef L. Yu, D.D. Tune, C.J. Shearer, J.G. Shapter, 'Implementation of antireflection layers for improved efficiency of carbon nanotube–silicon heterojunction solar cells', Solar Energy, vol. 118, pp. 592-599, 2015. CrossRef D. Majchrowicz, Daria, et al., Nitrogen-Doped Diamond Film for Optical Investigation of Hemoglobin Concentration, Materials, vol. 11.1, pp. 109, 2018. CrossRef K.L. Konnerth, F.H. Dill, 'In-situ measurement of dielectric thickness during etching or developing processes', IEEE Transactions on Electron Devices, vol. 22.7, pp. 452-456, 1975. CrossRef Z.G. Hu, P. Prunici, P. Hess, K.H. Chen, 'Optical properties of nanocrystalline diamond films from mid-infrared to ultraviolet using reflectometry and ellipsometry', Journal of Materials Science: Materials in Electronics, vol. 18.1, pp. 37-41, 2007. CrossRef J. Adamczewska, et al., 'Procesy technologiczne w elektronice półprzewodnikowej', WNT, Warsaw, 1980.J.P. Dilger, L. R. Fisher, D. A. Haydon, 'A critical comparison of electrical and optical methods for bilayer thickness determination', Chemistry and Physics of Lipids, vol. 30.2-3, pp. 159-176, 1982. CrossRef M, Ficek, et al, 'Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates', Applied Surface Science, vol. 387, pp. 846-856, 2016. CrossRef R. Bogdanowicz, et al, 'Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film', J. Opt. Soc. Korea, vol. 19, pp. 705-710, 2015. CrossRef M. Sobaszek, et al., 'Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes', Optical Materials, vol.42, pp. 24-34, 2015. CrossRef R. Bogdanowicz, et al, 'Improved surface coverage of an optical fibre with nanocrystalline diamond by the application of dip-coating seeding', Diamond and Related Materials, vol. 55, pp. 52-63, 2015. CrossRef Z.G. Hu, P. Hess, 'Optical constants and thermo-optic coefficients of nanocrystalline diamond films at 30–500oC', Applied physics letters, vol. 89.8: 081906, 2006. CrossRef

scholarly journals A Simple Low-Temperature Glass Bonding Process with Surface Activation by Oxygen Plasma for Micro/Nanofluidic Devices

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 804
Author(s):  
Koki Shoda ◽  
Minori Tanaka ◽  
Kensuke Mino ◽  
Yutaka Kazoe
Keyword(s):  
Low Temperature ◽  
Silica Glass ◽  
Oxygen Plasma ◽  
Substrate Surface ◽  
Fused Silica ◽  
Bonding Energy ◽  
Surface Activation ◽  
Glass Substrates ◽  
Nanofluidic Devices ◽  
Fused Silica Glass

The bonding of glass substrates is necessary when constructing micro/nanofluidic devices for sealing micro- and nanochannels. Recently, a low-temperature glass bonding method utilizing surface activation with plasma was developed to realize micro/nanofluidic devices for various applications, but it still has issues for general use. Here, we propose a simple process of low-temperature glass bonding utilizing typical facilities available in clean rooms and applied it to the fabrication of micro/nanofluidic devices made of different glasses. In the process, the substrate surface was activated with oxygen plasma, and the glass substrates were placed in contact in a class ISO 5 clean room. The pre-bonded substrates were heated for annealing. We found an optimal concentration of oxygen plasma and achieved a bonding energy of 0.33–0.48 J/m2 in fused-silica/fused-silica glass bonding. The process was applied to the bonding of fused-silica glass and borosilicate glass, which is generally used in optical microscopy, and revealed higher bonding energy than fused-silica/fused-silica glass bonding. An annealing temperature lower than 200 °C was necessary to avoid crack generation by thermal stress due to the different thermal properties of the glasses. A fabricated micro/nanofluidic device exhibited a pressure resistance higher than 600 kPa. This work will contribute to the advancement of micro/nanofluidics.

Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes

2015 ◽  
Vol 42 ◽  
pp. 24-34 ◽  
Author(s):  
M. Sobaszek ◽  
Ł. Skowroński ◽  
R. Bogdanowicz ◽  
K. Siuzdak ◽  
A. Cirocka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals DFT studies of refractive index of boron-doped diamond

2018 ◽  
Vol 10 (2) ◽  
pp. 39 ◽  
Author(s):  
Bartłomiej Dec ◽  
Robert Bogdanowicz
Keyword(s):  
Density Functional Theory ◽  
Ab Initio ◽  
Density Functional ◽  
Fused Silica ◽  
Band Gaps ◽  
Optical And Electrical Properties ◽  
Boron Doped Diamond ◽  
Functional Theory ◽  
Long Period ◽  
Boron Doped

The density functional theory is one of the optimal solutions in calculation of optical properties of materials on the quantum scale. In this paper, we have investigated refractive index of a boron-doped diamond structure with the usage of Atomistic Toolkit software from Synopsys. During this study, various methods and pseudopotentials were checked to obtain an optimal performance-accuracy method for calculation of such materials. Leading method used in calculation was used meta-GGA with Fritz-Haber Institute pseudopotential. Full Text: PDF ReferencesW. Kohn and L. J. Sham, "Self-Consistent Equations Including Exchange and Correlation Effects", Phys. Rev., vol. 140, no. 4A, pp. A1133–A1138 (1965). CrossRef J. P. Perdew, K. Burke, and M. Ernzerhof, "Generalized Gradient Approximation Made Simple", Phys. Rev. Lett., vol. 77, no. 18, pp. 3865–3868 (1996). CrossRef Y. Yan, J. Gong, and Z. Zong, "Superconductivity of p-type diamond (001) and (111) thin films: Ab initio calculations", Thin Solid Films, vol. 518, no. 17, pp. 4989–4996 (2010). CrossRef M. P. Desjarlais, "Density functional calculations of the reflectivity of shocked xenon with ionization based gap corrections", Contributions to Plasma Physics, vol. 45, no. 3–4, pp. 300–304 (2005). CrossRef L. G. Ferreira, M. Marques, and L. K. Teles, "Approximation to density functional theory for the calculation of band gaps of semiconductors", Physical Review B, vol. 78, no. 12, (2008). CrossRef J. M. Soler et al., "The SIESTA method for ab initio order- N materials simulation", Journal of Physics: Condensed Matter, vol. 14, no. 11, pp. 2745–2779 (2002). CrossRef L. Kleinman and D. M. Bylander, "Efficacious Form for Model Pseudopotentials", Phys. Rev. Lett., vol. 48, no. 20, pp. 1425–1428 (1982). CrossRef Synopsys QuantumWise, Atomistix Toolkit version 2017.12.F. Tran and P. Blaha, "Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential", Phys. Rev. Lett., vol. 102, no. 22, p. 226401 (2009). CrossRef D. R. Lide, Ed., CRC Handbook of Chemistry and Physics, 83rd Edition, Boca Raton, Fla.: CRC Press, 2002.N. Troullier and J. L. Martins, "Efficient pseudopotentials for plane-wave calculations", Phys. Rev. B, vol. 43, no. 3, pp. 1993–2006 (1991). CrossRef W. A. Harrison, Solid state theory. McGraw-Hill, 1970.M. Sobaszek et al., "Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes", Optical Materials, vol. 42, pp. 24–34 (2015). CrossRef M. Ficek et al., "Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates", Applied Surface Science, vol. 387, pp. 846–856 (2016). CrossRef R. Maezono, A. Ma, M. D. Towler, and R. J. Needs, "Equation of State and Raman Frequency of Diamond from Quantum Monte Carlo Simulations", Phys. Rev. Lett., vol. 98, no. 2, p. 025701 (2007). CrossRef R. Bogdanowicz et al., "Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film", J. Opt. Soc. Korea, JOSK, vol. 19, no. 6, pp. 705–710, (2015). CrossRef M. Ficek et al., "Linear antenna microwave chemical vapour deposition of diamond films on long-period fiber gratings for bio-sensing applications", Opt. Mater. Express, OME, vol. 7, no. 11, pp. 3952–3962 (2017). CrossRef M. Ficek, R. Bogdanowicz, and J. Ryl, "Nanocrystalline CVD Diamond Coatings on Fused Silica Optical Fibres: Optical Properties Study", Acta Physica Polonica A, vol. 127, no. 3, pp. 868–873 (2015). CrossRef P. J. Stephens, F. J. Devlin, C. F. Chabalowski, and M. J. Frisch, "Ab Initio Calculation of Vibrational Absorption and Circular Dichroism Spectra Using Density Functional Force Fields", J. Phys. Chem., vol. 98, no. 45, pp. 11623–11627 (1994). CrossRef P. Rivero, W. Shelton, and V. Meunier, "Surface properties of hydrogenated diamond in the presence of adsorbates: A hybrid functional DFT study", Carbon, vol. 110, pp. 469–479 (2016). CrossRef

Optical Characteristics of Erbium-Doped SiO2/PVA Electrospun Nanofibers

2015 ◽  
Vol 1108 ◽  
pp. 59-66
Author(s):  
M. Kamil Abd-Rahman ◽  
N.F.M. Suhaimi ◽  
Evy Evana Edwin ◽  
Winnie Dian ◽  
Nur Hanis Abdul Halim
Keyword(s):  
Silica Glass ◽  
Sol Gel ◽  
Electrospun Nanofibers ◽  
Fused Silica ◽  
Optical Characteristics ◽  
Glass Substrates ◽  
Erbium Doped ◽  
Pva Solutions ◽  
Er Doped ◽  
Fused Silica Glass

This paper reports on the fabrication and optical characteristics of erbium-doped silica/PVA nanofibers via sol gel and electrospinning techniques. Silica glass, PVA (polyvinyl alcohol) and SiO2/PVA composites displayed 85% to 90% transparent across 300 2000 nm wavelength range. The transmission spectra were measured using Cary 5000 UV-Vis-NIR spectrophotometer. Silica was synthesized using TEOS (tetraethylorthosilicate) as the precursor, while PVA solution comprised of 7.0 wt% in H2O. The compositional ratios of SiO2:PVA were from 6:4 to 1:9 and were doped with 0.2% to 0.6% of erbium. Suitable viscosities of Er3+-doped SiO2:PVA solutions were electrospun into mesh of long strands nanofibers. Morphological and material compositions in the nanofibers were analysed using FESEM (field-emission scanning electron microscopy) and EDX (energy-dispersive X-ray spectroscopy). Er3+-doped SiO2:PVA thin films were coated on fused-silica glass substrates via spin coating and were characterized for their refractive indices, optical transmission, and fluorescence using M-line technique, UV-Vis-NIR spectrometer and photoluminescence spectrophotometer, respectively. Lower ratios of silica to PVA solutions results in higher viscosities and produced more uniform nanofiber structures of diameters around 100 nm with lesser beads. The refractive index of 1.61 for Er-doped SiO2:PVA (1:9) thin film was measured with TE polarized 632.8 nm wavelength laser and the index shows to be higher for more content of PVA in the glass/polymer composites. The 0.4% of Er3+ in SiO2:PVA composite produced the highest luminescence intensity at 605 nm when excited with 514 nm source. Higher doping content caused ion clustering effect and leads to concentration quenching, hence decreased in the emission intensity.

Spectral Properties of Spatially and Spectrally Partially Coherent Pulsed Beams in Fused-Silica Glass Medium

2010 ◽  
Vol 663-665 ◽  
pp. 108-112
Author(s):  
Chao Liang Ding ◽  
Min Teng ◽  
Zhi Guo Zhao ◽  
Liu Zhan Pan
Keyword(s):  
Spatial Correlation ◽  
Correlation Length ◽  
Silica Glass ◽  
Coherence Length ◽  
Spectral Properties ◽  
Spectral Shift ◽  
Fused Silica ◽  
Partially Coherent ◽  
Spatial Correlation Length ◽  
Fused Silica Glass

Using the coherence theory of non-stationary fields and the method of Fourier transform, the spectral properties of spatially and spectrally partially coherent Gaussian Schell-model pulsed (GSMP) beams in fused-silica glass medium are studied and analyzed numerically. It is shown that the spectral shift takes place, which depends on the position of the field point, spatial correlation length, temporal coherence length and dispersive property of medium, as GSMP beams propagate in fused-silica glass medium. The on-axis spectrum is blue-shifted, and the relative spectral shift increases with increasing propagation distance, and decreases as the spatial correlation length and temporal coherence length increases, and then approaches an asymptotic value. The dispersive property of medium plays an important role in the spectral properties of spatially and spectrally partially coherent beams.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Computer models of micrometeoroid impact on fused silica glass mirrors

2003 ◽  
Vol 29 (1-10) ◽  
pp. 203-214 ◽  
Author(s):  
David Davison ◽  
Burton Cour-Palais ◽  
Xiangyang Quan ◽  
T.J. Holmquist ◽  
Lester M. Cohen ◽  
...  
Keyword(s):  
Silica Glass ◽  
Computer Models ◽  
Fused Silica ◽  
Fused Silica Glass

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Sign in / Sign up

Export Citation Format

Share Document