Surface projected electronic band structure and adsorbate charge transfer dynamics: Ar adsorbed on Cu(111) and Cu(100)

2006 ◽  
Vol 427 (1-3) ◽  
pp. 91-95 ◽  
Author(s):  
S. Vijayalakshmi ◽  
A. Föhlisch ◽  
F. Hennies ◽  
A. Pietzsch ◽  
M. Nagasono ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Charge Transfer Dynamics

scholarly journals Charge transfer-induced enhancement of a Raman signal in a hybrid Ag–GaN nanostructure

RSC Advances ◽  
2019 ◽  
Vol 9 (49) ◽  
pp. 28554-28560 ◽  
Author(s):  
Kishor Upadhyaya ◽  
Sharvani S ◽  
Narasimha Ayachit ◽  
S. M. Shivaprasad
Keyword(s):  
Optical Properties ◽  
Charge Transfer ◽  
Band Structure ◽  
Ag Nanoparticles ◽  
Electronic Band Structure ◽  
Surface Conductivity ◽  
Raman Signal ◽  
Electronic Band ◽  
High Metal ◽  
Nanowall Network

The optical properties and electronic band structure of Ag nanoparticles dispersed on a GaN nanowall network were studied. High metal like surface conductivity was revealed, and charge transfer between Ag and GaN was involved in the enhancement of Raman signals.

Interstitial charge transfer pathways in a TiO2/CdIn2S4 heterojunction photocatalyst for direct conversion of sunlight into fuel

2018 ◽  
Vol 6 (33) ◽  
pp. 16064-16073 ◽  
Author(s):  
Manjiri A. Mahadadalkar ◽  
Suresh W. Gosavi ◽  
Bharat B. Kale
Keyword(s):  
Charge Transfer ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Energy Levels ◽  
Direct Conversion ◽  
Synergistic Interaction ◽  
Electronic Band ◽  
Valence Bands

The synergistic interaction between CdIn2S4 and TiO2 matrices leads to alteration in the electronic band structure of TiO2 and creates the energy levels between the conduction and valence bands for interstitial charge transfer.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

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