High-hardness carbide coatings and their production on X82WMoCrV6-5-4 steel using induction physical vapor deposition

2021 ◽  
pp. 115045
Author(s):  
Vladimir Koshuro ◽  
Marina Fomina ◽  
Aleksandr Fomin
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Hardness ◽  
Carbide Coatings

Synthesis and Characterization of α-Alumina Films Via Combustion Chemical Vapor Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
G. Grandinetti ◽  
S. Shanmugham ◽  
M.R. Hendrick ◽  
J.M. Hampikian
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Semiconductor Device ◽  
Sol Gel ◽  
Chemical Vapor ◽  
High Hardness ◽  
Reaction Chamber ◽  
Good Oxidation Resistance ◽  
Alumina Films

Abstractα-Alumina films are useful for high-temperature, wear, and semiconductor device applications because of their good oxidation resistance, high hardness values, and electrical properties. α-Alumina films have been previously synthesized using techniques such as chemical vapor deposition, sol-gel, physical vapor deposition, and plasma spraying. This paper presents an alternative approach for producing high quality dense α-alumina coatings using a flame-assisted process called combustion chemical vapor deposition (CCVD). This process is an open atmosphere technique that does not require the use of a reaction chamber. In this work alumina films were grown on YSZ at temperatures ranging from 900 to 1500°C. At lower temperatures only amorphous alumina was grown, but as the deposition temperature increased different alumina phases were formed. At 1100°C, a thin highly crystalline θ-Al2O3 coating was formed. At temperatures higher than 1100°C thick θ-Al2O3 coatings were deposited on the YSZ. Coatings were characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD).

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

scholarly journals Noble Metals for Modern Implant Materials: MOCVD of Film Structures and Cytotoxical, Antibacterial, and Histological Studies

Biomedicines ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 851
Author(s):  
Svetlana I. Dorovskikh ◽  
Evgeniia S. Vikulova ◽  
Elena V. Chepeleva ◽  
Maria B. Vasilieva ◽  
Dmitriy A. Nasimov ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Noble Metals ◽  
Mononuclear Cells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ti Alloy ◽  
Peripheral Blood Mononuclear ◽  
Histological Studies

This work is aimed at developing the modification of the surface of medical implants with film materials based on noble metals in order to improve their biological characteristics. Gas-phase transportation methods were proposed to obtain such materials. To determine the effect of the material of the bottom layer of heterometallic structures, Ir, Pt, and PtIr coatings with a thickness of 1.4–1.5 μm were deposited by metal–organic chemical vapor deposition (MOCVD) on Ti6Al4V alloy discs. Two types of antibacterial components, namely, gold nanoparticles (AuNPs) and discontinuous Ag coatings, were deposited on the surface of these coatings. AuNPs (11–14 nm) were deposited by a pulsed MOCVD method, while Ag films (35–40 nm in thickness) were obtained by physical vapor deposition (PVD). The cytotoxic (24 h and 48 h, toward peripheral blood mononuclear cells (PBMCs)) and antibacterial (24 h) properties of monophase (Ag, Ir, Pt, and PtIr) and heterophase (Ag/Pt, Ag/Ir, Ag/PtIr, Au/Pt, Au/Ir, and Au/PtIr) film materials deposited on Ti-alloy samples were studied in vitro and compared with those of uncoated Ti-alloy samples. Studies of the cytokine production by PBMCs in response to incubation of the samples for 24 and 48 h and histological studies at 1 and 3 months after subcutaneous implantation in rats were also performed. Despite the comparable thickness of the fibrous capsule after 3 months, a faster completion of the active phase of encapsulation was observed for the coated implants compared to the Ti alloy analogs. For the Ag-containing samples, growth inhibition of S. epidermidis, S. aureus, Str. pyogenes, P. aeruginosa, and Ent. faecium was observed.

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