Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon

2020 ◽  
Vol 20 (4) ◽  
pp. 572-581 ◽  
Author(s):  
Khalid N. Anindya ◽  
Md Sherajul Islam ◽  
Jeongwon Park ◽  
Ashraful G. Bhuiyan ◽  
Akihiro Hashimoto
Keyword(s):  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Phonon Modes ◽  
Bilayer Graphene Nanoribbon

Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon

2012 ◽  
Vol 100 (1) ◽  
pp. 013110 ◽  
Author(s):  
Yong-Jun Li ◽  
Ming-Da Li ◽  
Jian-Shuang Liu ◽  
Qing-Qing Sun ◽  
Peng Zhou ◽  
...  
Keyword(s):  
Transport Properties ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Atomic Scale ◽  
Bilayer Graphene Nanoribbon

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

Bilayer Graphene Nanoribbon Mobility Model in Ballistic Transport Limit

2013 ◽  
Vol 10 (5) ◽  
pp. 1262-1265
Author(s):  
S. Mahdi Mousavi ◽  
M. T. Ahmadi ◽  
Hatef Sadeghi ◽  
A. Nilghaz ◽  
M. J. Kiani ◽  
...  
Keyword(s):  
Ballistic Transport ◽  
Mobility Model ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Bilayer Graphene Nanoribbon

Bilayer Graphene nanoribbon conductance model in parabolic band structure

2010 ◽  
Author(s):  
S. Mahdi Mousavi ◽  
Mohammad Taghi Ahmadi ◽  
N. Aziziah Amin ◽  
Zaharah Johari ◽  
Hatef Sadeghi ◽  
...  
Keyword(s):  
Band Structure ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Bilayer Graphene Nanoribbon

Bilayer Graphene Nanoribbon Conductance Model in Parabolic Band Structure

2011 ◽  
Author(s):  
S. Mahdi Mousavi ◽  
Mohammad Taghi Ahmadi ◽  
N. Aziziah Amin ◽  
Zaharah Johari ◽  
Hatef Sadeghi ◽  
...  
Keyword(s):  
Band Structure ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Bilayer Graphene Nanoribbon
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