Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

2019 ◽  
Vol 19 (12) ◽  
pp. 1383-1390 ◽  
Author(s):  
Tae-Hyun Ryu ◽  
So-Jung Yoon ◽  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ferroelectric Properties ◽  
Oxide Electrodes ◽  
Thin Film Capacitors ◽  
Annealing Effects

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes

2008 ◽  
Vol 21 (5) ◽  
pp. 564-568 ◽  
Author(s):  
Sunkook Kim ◽  
Sanghyun Ju ◽  
Ju Hee Back ◽  
Yi Xuan ◽  
Peide D. Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Nanotube Arrays ◽  
Oxide Electrodes ◽  
Carbon Nanotube Arrays

Effect of Sc Doping on Ferroelectric and Dielectric Properties of Bi0.9La0.1FeO3 Thin Film by Sol-Gel Process

2012 ◽  
Vol 538-541 ◽  
pp. 78-82
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang ◽  
Huan Huan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process

Pure Bi0.9La0.1Fe1-xScxO3 (x = 0, 0.05, 0.10, 0.15, 0.20) (BLFSO) thin films were deposited on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The effect of Sc doping on the XRD, microstructure, dielectric and ferroelectric properties of BLFO films was studied. Compared to counterparts of Bi0.9La0.1FeO3 (BLFO) film, the grain refinement of all films is obvious. When the value of Sc is 0.15, the double remanent polarization 2Pr is effectively enhanced with the extreme value of 17.7µC/cm2. The dielectric constant exhibits a trends of increase firstly and then decrease with the increase amount of scandium level.

Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

1996 ◽  
Vol 29 (4-6) ◽  
pp. 255-258 ◽  
Author(s):  
Ashok V. Rao ◽  
Said A. Mansour ◽  
Arden L. Bement
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Capacitors ◽  
Pzt Thin Film

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

High Electric Resistance Polymer/Lipid Composite Films on Indium−Tin−Oxide Electrodes

Langmuir ◽  
1999 ◽  
Vol 15 (24) ◽  
pp. 8451-8459 ◽  
Author(s):  
Heiko Hillebrandt ◽  
Gerald Wiegand ◽  
Motomu Tanaka ◽  
Erich Sackmann
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Composite Films ◽  
Electric Resistance ◽  
Oxide Electrodes
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