The hopping variable range conduction in amorphous InAs thin films

2018 ◽  
Vol 18 (12) ◽  
pp. 1492-1495 ◽  
Author(s):  
Yanping Yao ◽  
Baoxue Bo ◽  
Chunling Liu
Keyword(s):  
Thin Films ◽  
Variable Range ◽  
Inas Thin Films

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

Variable range hopping conduction in ZnO nanocrystal thin films

2018 ◽  
Vol 29 (41) ◽  
pp. 415202 ◽  
Author(s):  
Brian T Benton ◽  
Benjamin L Greenberg ◽  
Eray Aydil ◽  
Uwe R Kortshagen ◽  
S A Campbell
Keyword(s):  
Thin Films ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Variable Range Hopping Conduction ◽  
Zno Nanocrystal

Terahertz Emission Enhancement in InAs Thin Films Using a Silicon Lens Coupler

2011 ◽  
Vol 50 (8R) ◽  
pp. 080207 ◽  
Author(s):  
Christopher T. Que ◽  
Tadataka Edamura ◽  
Makoto Nakajima ◽  
Masahiko Tani ◽  
Masanori Hangyo
Keyword(s):  
Thin Films ◽  
Terahertz Emission ◽  
Emission Enhancement ◽  
Silicon Lens ◽  
Inas Thin Films

scholarly journals Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042105 ◽  
Author(s):  
Toshi-kazu Suzuki ◽  
Hayato Takita ◽  
Cong Thanh Nguyen ◽  
Koichi Iiyama
Keyword(s):  
Thin Films ◽  
Flexible Substrates ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Inas Thin Films ◽  
Low K

Preparation and electrical properties of inas thin films

1978 ◽  
Vol 7 (5) ◽  
pp. 627-637 ◽  
Author(s):  
H. Okimura ◽  
C. R. Kannewurf ◽  
J. O. Brittain
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Inas Thin Films
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