Feasibility study on high current ion beam extraction from anode spot plasma for large area ion implantation

2015 ◽  
Vol 15 (12) ◽  
pp. 1599-1605 ◽  
Author(s):  
Yuna Lee ◽  
Kyoung-Jae Chung ◽  
Y.S. Hwang
Keyword(s):  
Ion Implantation ◽  
Feasibility Study ◽  
Ion Beam ◽  
Beam Extraction ◽  
High Current ◽  
Large Area ◽  
Anode Spot

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

scholarly journals Development of a new high-current triode extraction system for helicon ion source: design and simulation

2018 ◽  
Vol 36 (4) ◽  
pp. 477-486 ◽  
Author(s):  
M. Khoshhal ◽  
M. Habibi ◽  
Rod W. Boswell
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Ion Source ◽  
High Current ◽  
Ion Temperature ◽  
Beam Emittance ◽  
Extraction Voltage ◽  
Parabolic Geometry ◽  
First Time ◽  
Plasma Electrode

AbstractThree triode extraction systems are simulated by IBSimu ion optical code for Amirkabir Helicon Ion Source (AHIS). The optimized pierce and suggested parabolic electrodes are introduced for the first time in this paper. The obtained N+ beam for parabolic geometry designed for ion implantation has 66 keV energy, and 10.4 mA current. Ion beam emittance and Twiss parameters of the emittance ellipse as the function of x term index are calculated for parabolic electrode equation. The simulated triode extraction systems have been evaluated by using of optimized parameters such as the extraction voltage, gap distance, plasma electrode (PE) aperture, and ion temperature. The extraction voltage, gap distance, PE aperture, and ion temperature have been changed in the range of 58–70 kV, 35–39 mm, 4–6 mm, and 0.5–4.4 eV in the simulations, respectively.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

High‐current metal ion beam extraction from a multicusp ion source

1990 ◽  
Vol 61 (1) ◽  
pp. 538-540 ◽  
Author(s):  
Yutaka Inouchi ◽  
Hideki Tanaka ◽  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Kouzi Matsunaga
Keyword(s):  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
Beam Extraction ◽  
High Current ◽  
Multicusp Ion Source
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