Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

2015 ◽  
Vol 15 (9) ◽  
pp. 1027-1031 ◽  
Author(s):  
Hyeonseok Woo ◽  
Jongkyong Lee ◽  
Yongcheol Jo ◽  
Jaeseok Han ◽  
Jongmin Kim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Cap Layer ◽  
Current Reduction

scholarly journals Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

2003 ◽  
Vol 82 (8) ◽  
pp. 1293-1295 ◽  
Author(s):  
E. J. Miller ◽  
D. M. Schaadt ◽  
E. T. Yu ◽  
P. Waltereit ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Current Reduction ◽  
Electrochemical Surface Treatment

Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

2018 ◽  
Vol 57 (4) ◽  
pp. 040302 ◽  
Author(s):  
Tetsuro Hayashida ◽  
Takuma Nanjo ◽  
Akihiko Furukawa ◽  
Tatsuro Watahiki ◽  
Mikio Yamamuka
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Anode Process ◽  
Current Reduction

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

A Single-Phase Five-Level Transformer-Less PV Inverter for Leakage Current Reduction

2021 ◽  
pp. 1-1
Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
Pv Inverter ◽  
Current Reduction

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Dissipation ◽  
Schottky Diodes ◽  
Physical Structure ◽  
Active Area ◽  
Clear Correlation ◽  
Local Power ◽  
Degradation Mechanisms ◽  
Failure Simulation

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

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