Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles

2015 ◽  
Vol 15 (4) ◽  
pp. 535-540 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chin-Hsiang Liao ◽  
Chih-Ting Lin ◽  
Ruey-Dar Chang ◽  
Li-Chun Chang ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Charge Storage ◽  
Nonvolatile Memories ◽  
Storage Characteristics

Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Rui Wan ◽  
Way Kuo
Keyword(s):  
Nonvolatile Memory ◽  
Storage Capacity ◽  
Breakdown Strength ◽  
Charge Storage ◽  
Leakage Currents ◽  
Low Leakage ◽  
Nonvolatile Memories ◽  
High K ◽  
Memory Characteristics ◽  
Large Charge

AbstractSemiconducting or metallic nanocrystals embedded high-k films have been investigated. They showed promising nonvolatile memory characteristics, such as low leakage currents, large charge storage capacities, and long retention times. Reliability of four different kinds of nanocrystals, i.e., nc- Ru, -ITO, -Si and -ZnO, embedded Zr-doped HfO2 high-k dielectrics have been studied. All of them have higher relaxation currents than the non-embedded high-k film has. The decay rate of the relaxation current is in the order of nc-ZnO > nc-ITO > nc-Si > nc-Ru. When the relaxation currents of the nanocrystals embedded samples were fitted to the Curie-von Schweidler law, the n values were between 0.54 and 0.77, which are much lower than that of the non embedded high-k sample. The nanocrystals retain charges in two different states, i.e., deeply and loosely trapped. The ratio of these two types of charges was estimated. The charge storage capacity and holding strength are strongly influenced by the type of material of the embedded nanocrystals. The nc-ZnO embedded film holds trapped charges longer than other embedded films do. The ramp-relax result indicates that the breakdown of the embedded film came from the breakdown of the bulk high-k film. The type of nanocrystal material influences the breakdown strength.

The charge storage characteristics of PZT nanocrystal thin film

2008 ◽  
Vol 108 (10) ◽  
pp. 1371-1373 ◽  
Author(s):  
Zheng Jiao ◽  
Xiaojuan Wan ◽  
Huijiao Guo ◽  
Jia Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Storage ◽  
Storage Characteristics

Charge Storage Characteristics of Hybrid Nanodots Floating Gate

2019 ◽  
Vol 25 (7) ◽  
pp. 433-439 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Katsunori Makihara ◽  
Mitsuhisa Ikeda
Keyword(s):  
Floating Gate ◽  
Charge Storage ◽  
Storage Characteristics

Charge storage characteristics of atomic layer deposited ZrO2/Al2O3multilayered films

2012 ◽  
Vol 60 (3) ◽  
pp. 30301
Author(s):  
Zhenjie Tang ◽  
Rong Li ◽  
Xinhua Zhu ◽  
Zhiguo Liu
Keyword(s):  
Atomic Layer ◽  
Charge Storage ◽  
Storage Characteristics

The Charge Storage Characteristics of Si-QDs Embedded in Silicon Nitride Films (abstract)

2009 ◽  
Author(s):  
Seunghun Jang ◽  
Changhun Ko ◽  
Kiyoung Jeong ◽  
Moonsup Han ◽  
Beverly Karplus Hartline ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Charge Storage ◽  
Silicon Nitride Films ◽  
Storage Characteristics
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