Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride

2013 ◽  
Vol 13 (7) ◽  
pp. 1433-1439 ◽  
Author(s):  
Hock Jin Quah ◽  
Kuan Yew Cheong
Keyword(s):  
Gallium Nitride ◽  
Gate Oxide ◽  
Conduction Mechanisms ◽  
Current Conduction

Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)

2017 ◽  
Vol 20 (1) ◽  
Author(s):  
Li Liu ◽  
Yin-Tang Yang
Keyword(s):  
Barrier Height ◽  
Conduction Mechanism ◽  
Gate Oxide ◽  
Annealed Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Electrical Fields ◽  
Conduction Mechanisms ◽  
Current Conduction

AbstractCurrent conduction mechanisms of SiC metal-oxide-semiconductor (MOS) capacitors on n-type 4H-SiC with or without NO annealing have been investigated in this work. It has been revealed that Fowler-Nordheim (FN) tunneling is the dominating current conduction mechanism in high electrical fields, with barrier height of 2.67 and 2.54 eV respectively for samples with NO and without NO annealing. A higher barrier height for NO-annealed sample indicates the effect of N element on the SiC/SiO

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

2016 ◽  
Vol 858 ◽  
pp. 705-708
Author(s):  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Alessia Frazzetto ◽  
Alfio Guarnera ◽  
Mario Saggio ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Temperature Dependent ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
Gate Current ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Hole Conduction ◽  
Current Conduction ◽  
Post Deposition

This paper reports on the conduction mechanisms through the gate oxide and trapping effects at SiO2/4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O. The phenomena were studied by temperature dependent current–voltage measurements. The analysis of both n and p-MOS capacitors and of n-channel MOSFETs operating in the “gate-controlled-diode” configuration revealed an anomalous hole conduction behaviour through the SiO2/4H-SiC interface, with the onset of current conduction moving towards more negative values during subsequent voltage sweeps. The observed gate current instabilities upon subsequent voltage sweeps were deeply investigated by temperature dependent cyclic gate current measurements. The results were explained by the charge-discharge mechanism of hole traps in the oxide.

CURRENT CONDUCTION MECHANISMS OF ATOMIC-LAYER-DEPOSITED Al2O3/NITRIDED SiO2 STACKING GATE OXIDE ON 4H-SiC

2010 ◽  
Vol 24 (27) ◽  
pp. 5371-5378
Author(s):  
K. Y. CHEONG ◽  
Z. LOCKMAN ◽  
A. AZIZ ◽  
J. H. MOON ◽  
H. J. KIM ◽  
...  
Keyword(s):  
Electric Field ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Process Models ◽  
Temperature Range ◽  
Conduction Mechanisms ◽  
Current Conduction ◽  
Frenkel Emission ◽  
Limited Conduction ◽  
Nordheim Tunneling

Current conduction mechanisms of atomic-layer deposited Al 2 O 3 (13 nm) stacked on different thermal nitrided SiO 2 thicknesses (2, 4, and 6 nm) on n-type 4 H-SiC have been systematically analyzed. It has been observed that the oxides were thermally stable at the investigated temperature range (25–140°C). By using different conduction process models, such as Schottky emission, direct tunneling, Fowler–Nordheim tunneling, Poole–Frenkel emission, and space-charge limited conduction, which consists of three limited conduction processes, namely, Ohm's law, Child's law, and trap-filled limit, the conduction mechanisms of charge through the oxides have been evaluated. It has been found that the conduction mechanisms were not affected by the investigated temperature range. A relationship plot has been proposed among nitrided SiO 2 thickness, electric field, and conduction mechanisms.

scholarly journals Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts

2008 ◽  
Vol 57 (5) ◽  
pp. 3171
Author(s):  
Wang Xin-Juan ◽  
Zhang Jin-Feng ◽  
Zhang Jin-Cheng ◽  
Hao Yue
Keyword(s):  
Schottky Contacts ◽  
Structure Parameters ◽  
Conduction Mechanisms ◽  
Current Conduction

Superior field emission and alternating current conduction mechanisms for grains and grain boundaries in an NiO-[CdO]2 nanocomposite

2020 ◽  
Vol 142 ◽  
pp. 109462 ◽  
Author(s):  
S. Karmakar ◽  
B. Raviteja ◽  
Chetan D. Mistari ◽  
Vanshree Parey ◽  
Ranjit Thapa ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Field Emission ◽  
Alternating Current ◽  
Conduction Mechanisms ◽  
Current Conduction

The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements

2018 ◽  
Vol 85 ◽  
pp. 98-105 ◽  
Author(s):  
M. Hussein Al-Dharob ◽  
H. Elif Lapa ◽  
A. Kökce ◽  
A. Faruk Özdemir ◽  
D. Ali Aldemir ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Conduction Mechanisms ◽  
Current Conduction

Reliability Properties and Current Conduction Mechanisms of HfO2 MIS Capacitor with Dual Plasma Treatment

2019 ◽  
Vol 35 (4) ◽  
pp. 909-921 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ting-Chia Chang ◽  
Shou-Hsien Chen ◽  
I-Chung Deng
Keyword(s):  
Plasma Treatment ◽  
Conduction Mechanisms ◽  
Current Conduction ◽  
Mis Capacitor
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