Rapid thermal annealing effect on the characteristics of ZnSnO3 films prepared by RF magnetron sputtering

2012 ◽  
Vol 12 ◽  
pp. S104-S107 ◽  
Author(s):  
Yoon-Young Choi ◽  
Seong Jun Kang ◽  
Han-Ki Kim
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rf Magnetron Sputtering ◽  
Annealing Effect

Effect of Rapid Thermal Annealing on Al Dopedn-ZnO Films Grown by RF-Magnetron Sputtering

2005 ◽  
Vol 44 (7A) ◽  
pp. 4776-4779 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Hitoshi Tampo ◽  
June-O Song ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rf Magnetron Sputtering ◽  
Zno Films

scholarly journals Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealing

2008 ◽  
Vol 92 (14) ◽  
pp. 141911 ◽  
Author(s):  
N. A. Suvorova ◽  
I. O. Usov ◽  
L. Stan ◽  
R. F. DePaula ◽  
A. M. Dattelbaum ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Structural And Optical Properties

scholarly journals Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Simeon Simeonov ◽  
Anna Szekeres ◽  
Dencho Spassov ◽  
Mihai Anastasescu ◽  
Ioana Stanculescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Transport Mechanism ◽  
Rf Magnetron Sputtering ◽  
Deep Levels ◽  
Nitrogen Doped ◽  
Doped Zno

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

2007 ◽  
Vol 46 (6A) ◽  
pp. 3319-3323 ◽  
Author(s):  
Takahiro Hiramatsu ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Takashi Hirao
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Zinc Oxide Films

Rapid thermal annealing effect of (Ba,Sr)TiO3thin films

1997 ◽  
Vol 196 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Noboru Ichinose ◽  
Takashi Ogiwara
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effect
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