Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors

2012 ◽  
Vol 12 ◽  
pp. S69-S74 ◽  
Author(s):  
T. Shimura ◽  
D. Shimokawa ◽  
T. Matsumiya ◽  
N. Morimoto ◽  
A. Ogura ◽  
...  
2019 ◽  
Vol 16 (10) ◽  
pp. 539-543 ◽  
Author(s):  
Takayoshi Shimura ◽  
Tomoyuki Inoue ◽  
Yuki Okamoto ◽  
Takuji Hosoi ◽  
Hiroki Edo ◽  
...  

2020 ◽  
Vol 15 (1) ◽  
pp. 1-6
Author(s):  
Ricardo Cardoso Rangel ◽  
Katia R. A. Sasaki ◽  
Leonardo Shimizu Yojo ◽  
João Antonio Martino

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.


2008 ◽  
Vol 23 (2) ◽  
pp. 188-188
Author(s):  
M. Bibee ◽  
A. Mehta ◽  
S. Brennan ◽  
P. Pianetta

2013 ◽  
Vol 111 (21) ◽  
Author(s):  
F. Mastropietro ◽  
J. Eymery ◽  
G. Carbone ◽  
S. Baudot ◽  
F. Andrieu ◽  
...  

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
J. Matsui ◽  
Y. Tsusaka ◽  
H. Takano ◽  
Y. Kagoshima ◽  
T. Senda ◽  
...  

Strain in silicon on insulator (SOI) and strained-silicon(s-Si)/silicon–germanium (SiGe)/Si-substrate crystals is analysed by means of synchrotron X-ray microbeam diffraction. It is found that strain features of the s-Si/SiGe/Si crystals are much different from those of SOI crystals from the lattice tilt and lattice parameter distribution points of view. The two-dimensional lattice tilt maps obtained by scanning the synchrotron X-ray microbeam of about 1 μm in size on the sample surface are useful to study local strain distribution in those materials.


Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.


Cerâmica ◽  
2019 ◽  
Vol 65 (374) ◽  
pp. 274-281 ◽  
Author(s):  
S. S. Satpute ◽  
S. R. Wadgane ◽  
S. R. Kadam ◽  
D. R. Mane ◽  
R. H. Kadam

Abstract Y3+ substituted strontium hexaferrites having chemical composition SrYxFe12-xO19 (x= 0.0, 0.5, 1.0, 1.5) were successfully synthesized by sol-gel auto-combustion method. The structural and morphological studies of prepared samples were investigated by using X-ray diffraction technique, energy dispersive X-ray spectroscopy, field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy. The X-ray diffraction pattern confirmed the single-phase hexagonal structure of yttrium substituted strontium ferrite and the lattice parameters a and c increased with the substitution of Y3+ ions. The crystallite size also varied with x content from 60 to 80 nm. The morphology was studied by FE-SEM, and the grain size of nanoparticles ranged from 44 to 130 nm. The magnetic properties were investigated by using vibrating sample magnetometer. The value of saturation magnetization decreased from 49.60 to 35.40 emu/g. The dielectric constant decreased non-linearly whereas the electrical dc resistivity increased with the yttrium concentration in strontium hexaferrite.


2021 ◽  
pp. 1-13
Author(s):  
Yanjie Qi ◽  
Zehui Yang ◽  
Lin Kang

Due to the limitation of dynamic range of the imaging device, the fixed-voltage X-ray images often produce overexposed or underexposed regions. Some structure information of the composite steel component is lost. This problem can be solved by fusing the multi-exposure X-ray images taken by using different voltages in order to produce images with more detailed structures or information. Due to the lack of research on multi-exposure X-ray image fusion technology, there is no evaluation method specially for multi-exposure X-ray image fusion. For the multi-exposure X-ray fusion images obtained by different fusion algorithms may have problems such as the detail loss and structure disorder. To address these problems, this study proposes a new multi-exposure X-ray image fusion quality evaluation method based on contrast sensitivity function (CSF) and gradient amplitude similarity. First, with the idea of information fusion, multiple reference images are fused into a new reference image. Next, the gradient amplitude similarity between the new reference image and the test image is calculated. Then, the whole evaluation value can be obtained by weighting CSF. In the experiments of MEF Database, the SROCC of the proposed algorithm is about 0.8914, and the PLCC is about 0.9287, which shows that the proposed algorithm is more consistent with subjective perception in MEF Database. Thus, this study demonstrates a new objective evaluation method, which generates the results that are consistent with the subjective feelings of human eyes.


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