Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

2012 ◽  
Vol 12 (1) ◽  
pp. 228-232 ◽  
Author(s):  
F. Zhou ◽  
H.P. Lin ◽  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Channel Layer ◽  
Active Channel

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Thin-film transistors with sol–gel deposited Mg0.1Zn0.9O films as active channel layer

2011 ◽  
Vol 520 (1) ◽  
pp. 519-522 ◽  
Author(s):  
F.J. Wang ◽  
Y.F. Huang ◽  
W. Li ◽  
M.S. Xue ◽  
J.F. Ou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Layer ◽  
Active Channel

scholarly journals Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

2013 ◽  
Vol 34 (4) ◽  
pp. 517-519 ◽  
Author(s):  
Rongsheng Chen ◽  
Wei Zhou ◽  
Meng Zhang ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Layer ◽  
Active Channel ◽  
Bottom Gate

Effect of Interface and Surface on the Performance of a-Si:H TFTs

1992 ◽  
Vol 258 ◽  
Author(s):  
Jin Jang ◽  
Moon Youn Jung ◽  
Sun Sung Yoo ◽  
Hyon Kyun Song ◽  
Jung Mok Jun
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Oxidation ◽  
Gate Insulator ◽  
Rf Power ◽  
Electron Accumulation ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

Performance of sol–gel deposited Zn1−xMgxO films used as active channel layer for thin-film transistors

2007 ◽  
Vol 202 (4-7) ◽  
pp. 1323-1328 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Hua-Chi Cheng ◽  
Min-Chi Wang ◽  
Pee-Yew Lee ◽  
Chia-Fu Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Channel Layer ◽  
Active Channel
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