Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

2011 ◽  
Vol 11 (4) ◽  
pp. 1015-1019 ◽  
Author(s):  
Edward Namkyu Cho ◽  
Jung Han Kang ◽  
Ilgu Yun
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Scaling Down ◽  
Amorphous Ingazno

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

2015 ◽  
Vol 107 (6) ◽  
pp. 063504 ◽  
Author(s):  
Wei Wang ◽  
Ling Li ◽  
Congyan Lu ◽  
Yu Liu ◽  
Hangbing Lv ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

scholarly journals Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

2018 ◽  
Vol 6 ◽  
pp. 685-690 ◽  
Author(s):  
Chung-I. Yang ◽  
Cheng-Ming Tsai ◽  
Ming-Chang Yu ◽  
Shengdong Zhang ◽  
Ting-Chang Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Contact Type ◽  
Scaling Down ◽  
Amorphous Ingazno

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno
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