Optoelectronic properties of sputter-deposited Ag–SiO2 nanoparticle films by rapid thermal annealing

2011 ◽  
Vol 11 (1) ◽  
pp. S328-S332 ◽  
Author(s):  
J.H. Hsieh ◽  
Chuan Li ◽  
Y.Y. Wu ◽  
S.C. Jang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optoelectronic Properties ◽  
Nanoparticle Films ◽  
Sio2 Nanoparticle ◽  
Sputter Deposited

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

Characterization of Cuprous Oxide Thin Films for Application in Solar Cells

2019 ◽  
Vol 22 ◽  
pp. 65-73
Author(s):  
Ørnulf Nordseth ◽  
Irinela Chilibon ◽  
Bengt Gunnar Svensson ◽  
Raj Kumar ◽  
Sean Erik Foss ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cuprous Oxide ◽  
Wavelength Region ◽  
Morphological Properties ◽  
Optical Absorption Coefficient ◽  
Sputter Deposited ◽  
Post Deposition

Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

Large In-Plane Lattice Expansion in NiAs-MnSb Thin Films Induced by ns Laser Recrystallization

1995 ◽  
Vol 384 ◽  
Author(s):  
Yukiko Kubota ◽  
Grace L. Gorman ◽  
Ernesto E. Marinero
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strong Influence ◽  
Laser Pulses ◽  
Lateral Growth ◽  
Size Refinement ◽  
Laser Recrystallization ◽  
Krf Excimer Laser ◽  
Sputter Deposited

ABSTRACTSputter deposited MnSb thin films were annealed utilizing KrF excimer laser pulses (16ns), and the resulting structural and magnetic changes investigated. These changes are compared to those observed when the samples are subjected to isothermal and rapid thermal annealing treatments. Isothermal and rapid thermal annealing induce significant lateral grain growth, whereas the laser treatment produces vertical grain size refinement with no appreciable lateral growth. Annealing is shown to increase the hexagonal c-axis, reaching an expansion value of 7% for the laser annealed samples. This c-axis expansion has a strong influence on the magnetic properties of the thin films. Mechanisms for the c-axis expansion are discussed.

scholarly journals Rapid thermal annealing assisted stability and efficiency enhancement in a sputter deposited CuO photocathode

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29383-29390 ◽  
Author(s):  
Saeid Masudy-Panah ◽  
Roozbeh Siavash Moakhar ◽  
Chin Sheng Chua ◽  
Ajay Kushwaha ◽  
Ten It Wong ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Efficiency Enhancement ◽  
Morphology Of Films ◽  
Sputter Deposited

A stable and efficient CuO based photocathode by tuning the crystallinity and surface morphology of films by rapid thermal treatment.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Impact of Rapid Thermal Annealing of Ti/Tin Bilayers On Subsequent Chemical Vapor Deposition Of Tungsten

1996 ◽  
Vol 427 ◽  
Author(s):  
A. Mourouxt ◽  
R. Palmans ◽  
J. Keinonen ◽  
S. -L. Zhang ◽  
K. Maex ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Considerable Increase ◽  
Chemical Vapor ◽  
Post Treatment ◽  
Total Stress ◽  
Sputter Deposited ◽  
Interfacial Oxygen ◽  
Subsequent Chemical

AbstractThe influence of rapid thermal annealing (RTA) of Ti/TiN on the stress in the subsequently deposited tungsten (W) films and on the impurity contents at the TiN-W interface was investigated for two types of Ti/TiN bilayers sputter-deposited at 300 °C and 550 °C. A post treatment of the Ti/TiN bilayers resulted in a substantially decreased stress in the W films. It also led to a considerable reduction of the fluorine contents at the TiN-W interface. Both effects were more pronounced for the W deposited on the low-temperature Ti/TiN bilayers and/or annealed in the NH3 atmosphere, than on the high-temperature Ti/TiN bilayers and/or annealed in the N2 atmosphere. Annealed in N2, the interfacial oxygen at the TiN-W interface increased slightly, which can be attributed to the presence of trace amounts of O2 in the N2 atmosphere. A slight increase in the W film resistivity was thus found for the W films deposited on the N2 annealed Ti/TiN bilayers, while the resistivity decreased somewhat for the W films deposited on the NH3 annealed Ti/TiN bilayers. After the post treatment, a large amount of nitrogen was found incorporated in the Ti layer forming TiNx (× < 0.3). However, the post treatment led to a considerable increase in the tensile stress in the Ti/TiN bilayers, and then an increase in the total stress of the whole Ti/TiN/W system. This stress increase could be controlled by using moderate anneal temperatures (e.g. < 550 °C) for the post treatment.

Opto-electronic properties of sputter-deposited Cu2O films treated with rapid thermal annealing

2008 ◽  
Vol 516 (16) ◽  
pp. 5449-5453 ◽  
Author(s):  
J.H. Hsieh ◽  
P.W. Kuo ◽  
K.C. Peng ◽  
S.J. Liu ◽  
J.D. Hsueh ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cu2o Films ◽  
Sputter Deposited

scholarly journals Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

2012 ◽  
Vol 3 ◽  
pp. 35001 ◽  
Author(s):  
H. Koshino ◽  
Z. Tang ◽  
S. Sato ◽  
H. Shimizu ◽  
Y. Fujii ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Solar Cells ◽  
Sputter Deposited ◽  
Si Thin Film
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