Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

2006 ◽  
Vol 6 ◽  
pp. e172-e175 ◽  
Author(s):  
Dong Ho Kim ◽  
Cheong Hyun Roh ◽  
Hong Joo Song ◽  
Yeon-Shik Choi ◽  
Cheol-Koo Hahn ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resonant Cavity ◽  
Avalanche Photodetectors ◽  
Gaas Quantum Dot

Readout on the resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector

2011 ◽  
Author(s):  
Fang-min Guo ◽  
Yong-pan Wang ◽  
Feng Mao ◽  
Zheng-qi Zheng ◽  
Jun-hao Chu
Keyword(s):  
Quantum Dot ◽  
Resonant Cavity ◽  
Gaas Quantum Dot

scholarly journals Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
W. W. Wang ◽  
F. M. Guo ◽  
Y. Q. Li
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Reverse Bias ◽  
Detection Efficiency ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Device Structure ◽  
High Quantum Efficiency ◽  
Gaas Quantum Dot

We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices

2001 ◽  
Vol 16 (10) ◽  
pp. 844-848 ◽  
Author(s):  
I L Krestnikov ◽  
N A Maleev ◽  
A V Sakharov ◽  
A R Kovsh ◽  
A E Zhukov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resonant Cavity ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Gaas Quantum Dot

Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling

2021 ◽  
Vol 124 ◽  
pp. 105614
Author(s):  
S. Tilouche ◽  
A. Sayari ◽  
M. Omri ◽  
S. Souilem ◽  
L. Sfaxi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Theoretical Study ◽  
Quantum Dot Molecules ◽  
Gaas Quantum Dot

Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

2008 ◽  
Vol 20 (18) ◽  
pp. 1575-1577
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Single Period ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot
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