Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15695-15699 ◽  
Author(s):  
Sheng Sun ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Hua Xu ◽  
...  
Keyword(s):  
Thin Layer ◽  
Electrochemical Oxidation ◽  
Field Effect ◽  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
High Reliability ◽  
Organic Field Effect Transistors ◽  
Electrical Stability ◽  
Gate Insulators

Flexible OFETs with electrochemically oxidized gate insulators (AlOx:Nd) covered by a thin layer of Cytop were fabricated on a PEN substrate. The device exhibited higher mobility and better electrical stability.

Deoxyribonucleic acid-ceramic hybrid dielectrics for potential application as gate insulators in organic field effect transistors

2013 ◽  
Vol 103 (11) ◽  
pp. 113701 ◽  
Author(s):  
Fahima Ouchen ◽  
Narayanan Venkat ◽  
Donna M. Joyce ◽  
Kristi M. Singh ◽  
Steven R. Smith ◽  
...  
Keyword(s):  
Potential Application ◽  
Field Effect ◽  
Deoxyribonucleic Acid ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators

High-k polymeric gate insulators for organic field-effect transistors

2019 ◽  
Vol 30 (20) ◽  
pp. 202002 ◽  
Author(s):  
Haiyang Yu ◽  
Yihang Chen ◽  
Huanhuan Wei ◽  
Jiangdong Gong ◽  
Wentao Xu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators ◽  
High K
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