Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon

2020 ◽  
Vol 532 ◽  
pp. 147463 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jaroslav Kovac ◽  
Michal Trnka ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Etching Time ◽  
Structure And Morphology

Porous Silicon Photoluminescence Versus HF Etching: No Correlation with Surface Hydrogen Species

1992 ◽  
Vol 283 ◽  
Author(s):  
M. B. Robinson ◽  
A. C. Dillon ◽  
S. M. George
Keyword(s):  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Hydrofluoric Acid ◽  
Etching Time ◽  
Photoluminescence Intensity ◽  
Surface Species ◽  
Initial Sample ◽  
Surface Hydrogen

ABSTRACTThe photoluminescence and infrared absorbance of electrochemically anodized porous silicon samples were examined as a function of hydrofluoric acid (HF) etching time. Transmission FTIR spectroscopy measurements revealed that the infrared absorbance from silicon hydrogen surface species was largest for the initial porous silicon samples and immediately decreased with HF etching. In contrast, the photoluminescence did not appear until after HF etching times of 20–80 minutes, depending on initial sample porosity. Subsequently, the photoluminescence intensity increased, reached a maximum, and then progressively decreased versus HF etching time. These HF etching results demonstrate that there is no direct correlation between the photoluminescence and the silicon hydrogen surface species.

scholarly journals Effect of etching time on characterizations of porous silicon passivated by a nano-silver layer

2020 ◽  
Vol 1529 ◽  
pp. 032106
Author(s):  
Muna E. Raypah ◽  
Naser M. Ahmed ◽  
S.A.M Samsuri ◽  
Shahrom Mahmud
Keyword(s):  
Porous Silicon ◽  
Silver Layer ◽  
Etching Time ◽  
Nano Silver

scholarly journals EFFECT OF ETCHING AS PRE-TREATMENT FOR ELECTROLESS COPPER PLATING ON SILICON WAFER

2017 ◽  
Vol 79 (7) ◽  
Author(s):  
Shazatul Akmaliah Mior Shahidin ◽  
Nor Akmal Fadil ◽  
Mohd Zamri Yusop ◽  
Mohd Nasir Tamin ◽  
Saliza Azlina Osman
Keyword(s):  
Silicon Wafer ◽  
Hydrofluoric Acid ◽  
Copper Film ◽  
Etching Time ◽  
Electroless Copper Plating ◽  
Cross Sectional ◽  
Electroless Process ◽  
Pre Treatment ◽  
Sectional Analysis ◽  
Mechanical Bonding

Metallic coatings, such as copper films can be easily deposited on semiconductor materials like silicon wafer without prior surface pre-treatment using the electroless process. However, the adhesion of the copper film can be very weak and can easily peels off. In this study, the effect of etching in hydrofluoric acid solution as a surface pre-treatment prior to electroless plating on silicon wafer was studied. The etching time in hydrofluoric acid was varied at 1, 3 and 5 minutes in order to investigate the adhesion behaviour of the coating layer. The surface morphology of the electroless plated samples was observed using a field emission scanning electron microscope (FESEM) and the coating thickness was measured using cross sectional analysis. The results showed that longer etching time (5 minutes) produced thicker Cu deposits (8.5μm) than 1 minute etching time (5μm). In addition, by increasing the etching time, the mechanical bonding between the copper film and the substrate is improved.

scholarly journals Acid Etching as Surface Treatment Method for Luting of Glass-Ceramic Restorations, part 1: Acids, Application Protocol and Etching Effectiveness

2018 ◽  
Vol 6 (3) ◽  
pp. 568-573 ◽  
Author(s):  
Emilija Barjaktarova-Valjakova ◽  
Anita Grozdanov ◽  
Ljuben Guguvcevski ◽  
Vesna Korunoska-Stevkovska ◽  
Biljana Kapusevska ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Glass Ceramic ◽  
Hydrofluoric Acid ◽  
Treatment Method ◽  
Acid Etching ◽  
Etching Time ◽  
Ceramic Surface ◽  
Adhesive Luting ◽  
Ceramic Restorations ◽  
Etching Effect

AIM: The purpose of this review is to represent acids that can be used as surface etchant before adhesive luting of ceramic restorations, placement of orthodontic brackets or repair of chipped porcelain restorations. Chemical reactions, application protocol, and etching effect are presented as well.STUDY SELECTION: Available scientific articles published in PubMed and Scopus literature databases, scientific reports and manufacturers' instructions and product information from internet websites, written in English, using following search terms: “acid etching, ceramic surface treatment, hydrofluoric acid, acidulated phosphate fluoride, ammonium hydrogen bifluoride”, have been reviewed.RESULTS: There are several acids with fluoride ion in their composition that can be used as ceramic surface etchants. The etching effect depends on the acid type and its concentration, etching time, as well as ceramic type. The most effective etching pattern is achieved when using hydrofluoric acid; the numerous micropores and channels of different sizes, honeycomb-like appearance, extruded crystals or scattered irregular ceramic particles, depending on the ceramic type, have been detected on the etched surfaces.CONCLUSION: Acid etching of the bonding surface of glass - ceramic restorations is considered as the most effective treatment method that provides a reliable bond with composite cement. Selective removing of the glassy matrix of silicate ceramics results in a micromorphological three-dimensional porous surface that allows micromechanical interlocking of the luting composite.

Etching time effect on optical properties of porous silicon for solar cells fabrication

Optik ◽  
2017 ◽  
Vol 147 ◽  
pp. 343-349 ◽  
Author(s):  
Y. Al-Douri ◽  
N. Badi ◽  
C.H. Voon
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Porous Silicon ◽  
Time Effect ◽  
Etching Time

EFFECT OF ETCHING TIME ON OPTICAL AND MORPHOLOGICAL FEATURES OF N-TYPE POROUS SILICON PREPARED BY PHOTO-ELECTROCHEMICAL METHOD

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Asad A. Thahe ◽  
Noriah Bidin ◽  
Mohammed A. Al-Azawi ◽  
Naser M. Ahmed
Keyword(s):  
Porous Silicon ◽  
Gravimetric Method ◽  
Constant Current ◽  
Etching Time ◽  
Absorption Data ◽  
Time Duration ◽  
Constant Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structure Properties

Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.  

Chemical etching of porous silicon in diluted hydrofluoric acid

1998 ◽  
Vol 109 (3) ◽  
pp. 195-199 ◽  
Author(s):  
Takashi Tsuboi ◽  
Tetsuo Sakka ◽  
Yukio H. Ogata
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Chemical Etching

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Effect of etching time on structure of p-type porous silicon

2018 ◽  
Vol 461 ◽  
pp. 44-47 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Pavol Vojtek ◽  
Jan Gregus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
P Type
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