Direct synthesis of single-layer graphene films on quartz substrate by a nanoparticle-assisted method

2020 ◽  
Vol 529 ◽  
pp. 147082 ◽  
Author(s):  
Yue Li ◽  
Yunbiao Zhao ◽  
Yi Chen ◽  
Yuhan Chen ◽  
Danqing Zhou ◽  
...  
Keyword(s):  
Quartz Substrate ◽  
Direct Synthesis ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Films

Field Emission of Single-Layer Graphene Films Prepared by Electrophoretic Deposition

2009 ◽  
Vol 21 (17) ◽  
pp. 1756-1760 ◽  
Author(s):  
Zhong-Shuai Wu ◽  
Songfeng Pei ◽  
Wencai Ren ◽  
Daiming Tang ◽  
Libo Gao ◽  
...  
Keyword(s):  
Field Emission ◽  
Electrophoretic Deposition ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Graphene Films

scholarly journals Synthesis of large area, homogeneous, single layer graphene films by annealing amorphous carbon on Co and Ni

Nano Research ◽  
2011 ◽  
Vol 4 (6) ◽  
pp. 531-540 ◽  
Author(s):  
Carlo M. Orofeo ◽  
Hiroki Ago ◽  
Baoshan Hu ◽  
Masaharu Tsuji
Keyword(s):  
Amorphous Carbon ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Large Area ◽  
Layer Graphene ◽  
Graphene Films

Direct formation of wafer-scale single-layer graphene films on the rough surface substrate by PECVD

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 456-461 ◽  
Author(s):  
Liangchao Guo ◽  
Zhenyu Zhang ◽  
Hongyan Sun ◽  
Dan Dai ◽  
Junfeng Cui ◽  
...  
Keyword(s):  
Rough Surface ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Wafer Scale ◽  
Layer Graphene ◽  
Graphene Films ◽  
Direct Formation

Internal Friction and Shear Modulus of Graphene Films

2012 ◽  
Vol 184 ◽  
pp. 319-324 ◽  
Author(s):  
Xiao Liu ◽  
Thomas H. Metcalf ◽  
Jeremy T. Robinson ◽  
F. Keith Perkins ◽  
Brian H. Houston
Keyword(s):  
Graphene Oxide ◽  
Internal Friction ◽  
Shear Modulus ◽  
Reduced Graphene Oxide ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Cvd Graphene ◽  
Layer Graphene ◽  
Graphene Films ◽  
Reduced Graphene

We report internal friction and shear modulus measurements of several types of synthesized graphene films. They include reduced graphene oxide, chemical-vapor deposited (CVD) graphene films on thin nickel films and on copper foils. These films were transferred from their host substrate into a water bath, and re-deposited onto to a high-Q single crystal silicon mechanical double-paddle oscillator. A minimal thickness dependence of both internal friction and shear modulus was found for reduced graphene oxide films varying thickness from 4 to 90 nm and CVD graphene films on nickel from 6 to 8 nm. The shear modulus of these multilayered films averages 53 GPa. Their internal friction exhibits a temperature independent plateau below 10K. The values of the plateaus are similar for both the reduced graphene oxide films and CVD graphene films on nickel, and they are as high as the universal "glassy range" where the tunneling states dominated internal friction of amorphous solids lies. In contrast, CVD graphene films on copper foils are 90~95% single layer. The shear modulus of these single layer graphene films are about five times higher, averaging 280 GPa. Their low temperature internal friction is too small to measure within the uncertainty of our experiments. Our results demonstrate the dramatic difference in the elastic properties of multilayer and single layer graphene films.

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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