Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments

2020 ◽  
Vol 506 ◽  
pp. 144673 ◽  
Author(s):  
Hoon-Ki Lee ◽  
Hyung-Joong Yun ◽  
Kyu-Hwan Shim ◽  
Hyun-Gwon Park ◽  
Tae-Hoon Jang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystalline ◽  
Chemical Treatments ◽  
Wet Chemical ◽  
Dry Etch

Kinetic Study of Wet Chemical Treatments on the Surface Roughness of Epoxy Polymer Layers for Buildup Layers

2004 ◽  
Vol 151 (12) ◽  
pp. C831 ◽  
Author(s):  
Sam Siau ◽  
Alfons Vervaet ◽  
Sylvie Nalines ◽  
Etienne Schacht ◽  
Andre Van Calster
Keyword(s):  
Surface Roughness ◽  
Kinetic Study ◽  
Epoxy Polymer ◽  
Polymer Layers ◽  
Chemical Treatments ◽  
Wet Chemical

Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs

2011 ◽  
Author(s):  
C. H. Lee ◽  
T. Nishimura ◽  
T. Tabata ◽  
M. Yoshida ◽  
K. Nagashio ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electron Mobility ◽  
Chemical Treatments ◽  
Wet Chemical

Kinetic Study of Wet Chemical Treatments on the Surface Roughness of Epoxy Polymer Layers for Buildup Layers

2004 ◽  
Vol 151 (12) ◽  
pp. C816 ◽  
Author(s):  
Sam Siau ◽  
Alfons Vervaet ◽  
Sylvie Nalines ◽  
Etienne Schacht ◽  
Andre Van Calster
Keyword(s):  
Surface Roughness ◽  
Kinetic Study ◽  
Epoxy Polymer ◽  
Polymer Layers ◽  
Chemical Treatments ◽  
Wet Chemical

Epoxy Polymer Surface Roughness Modeling Based on Kinetic Studies of Wet Chemical Treatments

2004 ◽  
Vol 151 (8) ◽  
pp. J54 ◽  
Author(s):  
Sam Siau ◽  
Alfons Vervaet ◽  
Andre Van Calster ◽  
Ives Swennen ◽  
Etienne Schacht
Keyword(s):  
Surface Roughness ◽  
Epoxy Polymer ◽  
Polymer Surface ◽  
Kinetic Studies ◽  
Chemical Treatments ◽  
Wet Chemical

Influence of wet chemical treatments on the evolution of epoxy polymer layer surface roughness for use as a build-up layer

2004 ◽  
Vol 237 (1-4) ◽  
pp. 457-462 ◽  
Author(s):  
Sam Siau ◽  
Alfons Vervaet ◽  
Andre Van Calster ◽  
Ives Swennen ◽  
Etienne Schacht
Keyword(s):  
Surface Roughness ◽  
Epoxy Polymer ◽  
Polymer Layer ◽  
Layer Surface ◽  
Chemical Treatments ◽  
Wet Chemical

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability

2015 ◽  
Vol 161 ◽  
pp. 116-122 ◽  
Author(s):  
S. Carturan ◽  
G. Maggioni ◽  
S.J. Rezvani ◽  
R. Gunnella ◽  
N. Pinto ◽  
...  
Keyword(s):  
Surface Structure ◽  
High Purity ◽  
Chemical Treatments ◽  
Wet Chemical ◽  
Γ Ray

scholarly journals Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5716
Author(s):  
Siti Noorhaniah Yusoh ◽  
Khatijah Aisha Yaacob
Keyword(s):  
Surface Roughness ◽  
Physical Properties ◽  
Limit Of Detection ◽  
Silicon Nanowire ◽  
Volume Ratio ◽  
Silicon Nanowire Arrays ◽  
Atomic Force ◽  
Local Anodic Oxidation ◽  
Wet Chemical ◽  
Biosensor Device

SiNW (silicon nanowire) arrays consisting of 5- and 10-wires were fabricated by using an atomic force microscope—the local anodic oxidation (AFM-LAO) technique followed by wet chemical etching. Tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) at various concentrations were used to etch SiNWs. The SiNWs produced were differed in dimension and surface roughness. The SiNWs were functionalized and used for the detection of deoxyribonucleic acid (DNA) dengue (DEN-1). SiNW-based biosensors show sensitive detection of dengue DNA due to certain factors. The physical properties of SiNWs, such as the number of wires, the dimensions of wires, and surface roughness, were found to influence the sensitivity of the biosensor device. The SiNW biosensor device with 10 wires, a larger surface-to-volume ratio, and a rough surface is the most sensitive device, with a 1.93 fM limit of detection (LOD).

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

2009 ◽  
Vol 145-146 ◽  
pp. 181-184 ◽  
Author(s):  
Andrea E. Pap ◽  
Zsolt Nényei ◽  
Gábor Battistig ◽  
István Bársony
Keyword(s):  
Silicon Surface ◽  
Surface States ◽  
Surface Preparation ◽  
Hydrogen Desorption ◽  
Dangling Bonds ◽  
Hydrogen Atoms ◽  
Surface Band ◽  
Band Bending ◽  
Chemical Treatments ◽  
Wet Chemical

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

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