Annealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ ferroelectric thin films

2018 ◽  
Vol 443 ◽  
pp. 354-360 ◽  
Author(s):  
M.J.S. Oliveira ◽  
J.P.B. Silva ◽  
Kateřina Veltruská ◽  
V. Matolín ◽  
K.C. Sekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Ion Beam ◽  
Ferroelectric Thin Films

Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

1991 ◽  
Vol 116 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Angus Kingon ◽  
Michael Ameen ◽  
Orlando Auciello ◽  
Kenneth Gifford ◽  
Husam Al-Shareef ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ferroelectric Thin Films ◽  
Ion Beam Sputter Deposition

Thickness effects on the physical properties in ferroelectric thin films

2001 ◽  
Vol 33 (1-4) ◽  
pp. 271-279
Author(s):  
Jinsong Zhu ◽  
Xiaomei Lü ◽  
Yening Wang
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Ferroelectric Thin Films

Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 3124-3133 ◽  
Author(s):  
Fan-Yi Hsu ◽  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Chen-Ti Hu
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Spin Coating ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Preferential Orientation ◽  
Strontium Bismuth Tantalate ◽  
Metalorganic Decomposition

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

scholarly journals Composition of Ferroelectric Thin Films prepared by Backside Pulsed Ion-Beam Evaporation

2000 ◽  
Vol 120 (4) ◽  
pp. 427-432
Author(s):  
Tomihiro Sonegawa ◽  
Katsuhiko Ohtomo ◽  
Toshiki Arakaki ◽  
Takehiro Maehama ◽  
Weihua Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ferroelectric Thin Films

scholarly journals MICROSTRUCTURE AND PHYSICAL PROPERTIES OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS

1997 ◽  
Vol 46 (7) ◽  
pp. 1449
Author(s):  
YANG PING-XIONG ◽  
DENG HONG-MEI ◽  
ZHENG LI-RONG ◽  
LIN CHENG-LU
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Ferroelectric Thin Films
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