Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

2018 ◽  
Vol 434 ◽  
pp. 822-830 ◽  
Author(s):  
Andrey Sergeevich Sokolov ◽  
Yu-Rim Jeon ◽  
Sohyeon Kim ◽  
Boncheol Ku ◽  
Donghwan Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films

2019 ◽  
Vol 21 (17) ◽  
pp. 8843-8848 ◽  
Author(s):  
Jamal Shaibo ◽  
Rui Yang ◽  
Zhe Wang ◽  
He-Ming Huang ◽  
Jue Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Bond Length ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Electrical Field ◽  
External Electrical Field ◽  
Field Control

Resistive switching and magnetization in epitaxial LaBaCo2O5+δ films can be controlled through an external electrical field, and the switching is related to the tuning of oxygen vacancies and the Co–O–Co bond length.

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

Studies on Control of Oxygen Vacancies in MOD-made BaTiO3 Thin Film by Nitrogen Annealing to Improve Resistive Switching Behavior for ReRAM Application

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 235-240
Author(s):  
S. Maejima ◽  
T. Sugie ◽  
K. Yamashita ◽  
M. Noda
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Middle Part ◽  
Switching Behavior ◽  
Oxide Surface ◽  
Oxide Interface ◽  
Final Annealing ◽  
Bipolar Type ◽  
Interface Type

ABSTRACTMetal Organic Decomposition (MOD)-made BaTiO3 (BT) thin films were prepared for Resistive Random Access Memory (ReRAM) under various annealing conditions and investigated for improving the properties of bipolar-type resistive switching, focusing on the relation between oxygen vacancies and the behavior of resistive hysteresis. BT thin films with both pre- and final- annealing in nitrogen showed the resistive hysteresis of bipolar-type switching with current ON/OFF ratios of 2 orders of magnitude for both bias polarities. Finally they showed the endurance property with the 106 switching cycles. It was suggested that oxygen vacancies near the oxide surface (both interfaces at metal electrode/oxide and between layer-by-layered oxide layers) are increased by N2 annealing and enhanced the interface-type resistive switching. Pre-annealing in N2 was also found to be very effective to improve endurance properties, implying that not only the electrode/oxide interface but also the middle part of the film would contribute the interface-type mechanism.

scholarly journals Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12615-12625 ◽  
Author(s):  
Chuangye Yao ◽  
Muhammad Ismail ◽  
Aize Hao ◽  
Santhosh Kumar Thatikonda ◽  
Wenhua Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Annealing Atmosphere ◽  
Atmosphere Effect ◽  
Gel Technique

The resistive switching and magnetic properties can be enhanced by controlling oxygen vacancies via the annealing atmosphere effect.

scholarly journals Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2705
Author(s):  
He-Chun Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Bipolar Resistive Switching ◽  
Factors Affecting ◽  
Sol Gel Process ◽  
Switching Characteristics

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

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