scholarly journals Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12615-12625 ◽  
Author(s):  
Chuangye Yao ◽  
Muhammad Ismail ◽  
Aize Hao ◽  
Santhosh Kumar Thatikonda ◽  
Wenhua Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Annealing Atmosphere ◽  
Atmosphere Effect ◽  
Gel Technique

The resistive switching and magnetic properties can be enhanced by controlling oxygen vacancies via the annealing atmosphere effect.

Structural and Magnetic Properties of Mn/Fe co-Doped ZnO Thin Films Prepared by Sol–Gel Technique

2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Technique ◽  
Structural And Magnetic Properties ◽  
Doped Zno ◽  
Co Doped

scholarly journals Enhanced Magnetic Properties of Co-Doped BiFeO3 Thin Films via Structural Progression

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1798
Author(s):  
Liang Bai ◽  
Mingjie Sun ◽  
Wenjing Ma ◽  
Jinghai Yang ◽  
Junkai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Sem Images ◽  
Size Mismatch ◽  
Structural Progression ◽  
Gel Technique ◽  
Average Size ◽  
Perovskite Lattice ◽  
Co Doped

Co3+ doping in BiFeO3 is expected to be an effective method for improving its magnetic properties. In this work, pristine BiFeO3 (BFO) and doped BiFe1-xCoxO3 (BFCxO, x = 0.01, 0.03, 0.05, 0.07 and 0.10) composite thin films were successfully synthesized by a sol–gel technique. XRD and Raman spectra indicate that the Co3+ ions are substituted for the Fe3+ ion sites in the BFO rhombohedral lattice. Raman vibration of oxygen octahedron is obviously weakened due to the lattice distortion induced by the size mismatch between two B-site cations (Fe3+ and Co3+ ions), which has an impact on the magnetic properties of BFCxO. SEM images reveal a denser agglomeration in Co-doped samples. TEM results indicate that the average size of grains is reduced due to the Co3+ substitution. XPS measurements illustrate that the replacement of Fe3+ with Co3+ effectively suppresses the generation of oxygen defects and increases the concentration of Fe3+ ions at the B-site of perovskite lattice. Vibrating sample magnetometer (VSM) measurements show that the remanent magnetization (Mr) of BFC0.07O (3.6 emu/cm3) and the saturation magnetization (Ms) of BFC0.10O (48.84 emu/cm3) thin film both increase by approximately two times at room temperature, compared with that of the pure BFO counterpart.

Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films with Different Annealing Atmosphere

2015 ◽  
Vol 740 ◽  
pp. 28-31
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Hong Di Xue
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Film Surface ◽  
Annealing Atmosphere ◽  
Single Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel technique with different annesling atmosphere. The structure and dielectric properties of the films were researched by XRD, SEM and Agilent. The study found that LSF-Mn (Co, Ni) films under the argon annealing atmosphere were have optimal dielectric properties. And Mn, Co, Ni elements are integrated into La0.5Sr0.5FeO3 lattices with the single perovskite phase. And uniform grain was distribution on the film surface.

Preparation and magnetic properties of the CoFe2O4 thin films on Si substrate by sol-gel technique

2005 ◽  
Vol 40 (16) ◽  
pp. 4169-4172 ◽  
Author(s):  
Nimai Chand Pramanik ◽  
Tatsuo FujiI ◽  
Makoto Nakanishi ◽  
Jun Takada
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Si Substrate ◽  
Gel Technique

Structure and Magnetic Properties of La0.66Sr0.33MnO3 Thin Films Derived Using Sol-Gel Technique

2011 ◽  
Vol 25 (8) ◽  
pp. 2767-2770 ◽  
Author(s):  
M. Zarbali ◽  
A. Göktaş ◽  
I. H. Mutlu ◽  
S. Kazan ◽  
A. G. Şale ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Gel Technique

scholarly journals Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2705
Author(s):  
He-Chun Zhou ◽  
Yan-Ping Jiang ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Bipolar Resistive Switching ◽  
Factors Affecting ◽  
Sol Gel Process ◽  
Switching Characteristics

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Interfacial resistive switching properties of Sr2TiO4/SrTiO3 heterojunction thin films prepared via sol-gel process

2021 ◽  
Author(s):  
Jun Li ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Sol Gel Process
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