Retraction notice to “Superior refractive index tailoring properties in composite ZrO2/SiO2 thin film systems achieved through reactive electron beam codeposition process” [Appl. Surf. Sci. 253 November (2) (2006) 618–626]

2017 ◽  
Vol 420 ◽  
pp. 993
Author(s):  
N.K. Sahoo ◽  
S. Thakur ◽  
R.B. Tokas
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Electron Beam ◽  
Sio2 Thin Film ◽  
Retraction Notice

scholarly journals Influences of Oxygen Ion Beam on the Properties of Magnesium Fluoride Thin Film Deposited Using Electron Beam Evaporation Deposition

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 834 ◽  
Author(s):  
Gong Zhang ◽  
Xiuhua Fu ◽  
Shigeng Song ◽  
Kai Guo ◽  
Jing Zhang
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Electron Beam ◽  
Color Center ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Magnesium Fluoride ◽  
High Porosity ◽  
Oxygen Ion ◽  
Wide Range

Magnesium fluoride (MgF2) materials are commonly used for near/medium infrared anti-reflection optical coatings due to their low refractive index and wide-range transparency. Ion assistant deposition is an important technique to increase the density of MgF2 and reduce absorption around 2.94 µm caused by high porosity and moisture adsorption. However, the excessive energy of Argon ion will induce a color center and; therefore, lead to UV/Visible absorption. In this paper, oxygen ion was introduced to reduce the color center effect in MgF2 thin film deposited using electron beam evaporation with ion assistant. The films were deposited on Bk7 and single crystal silicon substrates under various oxygen ion beam currents. The microstructure, optical constant, film density, stress, and adhesion are investigated, including the absorption properties at the infrared hydroxyl (–OH) vibration peak. The results show that as the oxygen ion beam current increases, the absorption value at the position of the infrared OH vibration, defects, and stress of the film decrease, while the refractive index increases. However, MgF2 has poor adhesion using oxygen ion-assisted deposition. Thin MgF2 film without ion beam assistant was used as adhesive layer, high density, and low absorption MgF2 film with good adhesion was obtained.

Refractive Index Tunable Nanoporous SiO2 Thin Film and Its Application to Mechanically Robust Broadband Anti-Reflection

2018 ◽  
Vol 10 (8) ◽  
pp. 1101-1106
Author(s):  
Daihong Huh ◽  
Hak-Jong Choi ◽  
Kwan Kim ◽  
Jaemin Park ◽  
Heon Lee
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Sio2 Thin Film

Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

scholarly journals Refractive index and salinity sensors by gallium-doped zinc oxide thin film coated on side-polished fibers

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Chuen-Lin Tien ◽  
Hao-Sheng Mao ◽  
Tzu-Chi Mao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Electron Beam ◽  
Fiber Optic ◽  
Flat Surface ◽  
Electron Beam Evaporation ◽  
Experimental Result ◽  
Fiber Sensors ◽  
Side Polished Fiber

This work presents a high-sensitivity refractive index and salinity sensor by using fiber-optic side-polishing and electron-beam evaporation techniques. Thin film coated on the flat surface of side-polished fibers can generate a lossy mode resonance (LMR) effect. A gallium-doped zinc oxide (GZO) thin film was prepared by an electron-beam evaporation with the ion assisted deposition method. The residual thickness of the side-polished fiber was 76.5 μm, and GZO film thickness of 69 nm was deposited on the flat surface of the side-polished fiber to fabricate LMR-based fiber sensors. The variation in the optical spectrum of LMR-based fiber sensors was measured by different refractive index saline solutions. The LMR wavelength shift is caused by the refractive index change, which is nearly proportional to the salinity. The corresponding sensitivity of the proposed fiber-optic sensor was 3059 nm/RIU (refractive index unit) for the refractive index range of 1.333 to 1.398. To evaluate the sensitivity of LMR salinity sensors, the saline solution salinities of 3.6%, 7.3%, 10.9%, 14.6%, 18.2% and 21.9% were measured in this work. The experimental result shows that the sensitivity of the proposed salinity sensor is 9.94 nm/%.

Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

2015 ◽  
Vol 9 (3) ◽  
pp. 2453-2460 ◽  
Author(s):  
Reza Shakouri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Sio2 Thin Film ◽  
Al2o3 Films ◽  
Beam Technique ◽  
Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.  The packing density of the samples is studied by change in the spectrum of a coating with humidity

High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application

2010 ◽  
Vol 93-94 ◽  
pp. 545-548
Author(s):  
B. Saekow ◽  
S. Porntheeraphat ◽  
Sakon Rahong ◽  
S. Jaruvanawat ◽  
J. Nukeaw
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Electron Beam ◽  
Photonic Crystal ◽  
Optical Measurement ◽  
High Refractive Index ◽  
Electron Beam Evaporation ◽  
Dielectric Thin Film ◽  
Thin Film Layer

The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

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