scholarly journals Refractive index and salinity sensors by gallium-doped zinc oxide thin film coated on side-polished fibers

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Chuen-Lin Tien ◽  
Hao-Sheng Mao ◽  
Tzu-Chi Mao

This work presents a high-sensitivity refractive index and salinity sensor by using fiber-optic side-polishing and electron-beam evaporation techniques. Thin film coated on the flat surface of side-polished fibers can generate a lossy mode resonance (LMR) effect. A gallium-doped zinc oxide (GZO) thin film was prepared by an electron-beam evaporation with the ion assisted deposition method. The residual thickness of the side-polished fiber was 76.5 μm, and GZO film thickness of 69 nm was deposited on the flat surface of the side-polished fiber to fabricate LMR-based fiber sensors. The variation in the optical spectrum of LMR-based fiber sensors was measured by different refractive index saline solutions. The LMR wavelength shift is caused by the refractive index change, which is nearly proportional to the salinity. The corresponding sensitivity of the proposed fiber-optic sensor was 3059 nm/RIU (refractive index unit) for the refractive index range of 1.333 to 1.398. To evaluate the sensitivity of LMR salinity sensors, the saline solution salinities of 3.6%, 7.3%, 10.9%, 14.6%, 18.2% and 21.9% were measured in this work. The experimental result shows that the sensitivity of the proposed salinity sensor is 9.94 nm/%.

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 834 ◽  
Author(s):  
Gong Zhang ◽  
Xiuhua Fu ◽  
Shigeng Song ◽  
Kai Guo ◽  
Jing Zhang

Magnesium fluoride (MgF2) materials are commonly used for near/medium infrared anti-reflection optical coatings due to their low refractive index and wide-range transparency. Ion assistant deposition is an important technique to increase the density of MgF2 and reduce absorption around 2.94 µm caused by high porosity and moisture adsorption. However, the excessive energy of Argon ion will induce a color center and; therefore, lead to UV/Visible absorption. In this paper, oxygen ion was introduced to reduce the color center effect in MgF2 thin film deposited using electron beam evaporation with ion assistant. The films were deposited on Bk7 and single crystal silicon substrates under various oxygen ion beam currents. The microstructure, optical constant, film density, stress, and adhesion are investigated, including the absorption properties at the infrared hydroxyl (–OH) vibration peak. The results show that as the oxygen ion beam current increases, the absorption value at the position of the infrared OH vibration, defects, and stress of the film decrease, while the refractive index increases. However, MgF2 has poor adhesion using oxygen ion-assisted deposition. Thin MgF2 film without ion beam assistant was used as adhesive layer, high density, and low absorption MgF2 film with good adhesion was obtained.


2010 ◽  
Vol 93-94 ◽  
pp. 545-548
Author(s):  
B. Saekow ◽  
S. Porntheeraphat ◽  
Sakon Rahong ◽  
S. Jaruvanawat ◽  
J. Nukeaw

The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.


2018 ◽  
Vol 6 (20) ◽  
pp. 5542-5551 ◽  
Author(s):  
Jingsong Luo ◽  
Jie Lin ◽  
Nan Zhang ◽  
Xiaoyang Guo ◽  
Ligong Zhang ◽  
...  

A novel Eu and F co-doped zinc oxide (EFZO) thin film has been prepared by ion-assisted electron beam evaporation.


1989 ◽  
Vol 136 (9) ◽  
pp. 2736-2740 ◽  
Author(s):  
Ken‐ichi Onisawa ◽  
Kazuo Taguchi ◽  
Moriaki Fuyama ◽  
Katsumi Tamura ◽  
Yoshio Abe ◽  
...  

2003 ◽  
Vol 34 (1) ◽  
pp. 563 ◽  
Author(s):  
Kwang Ho Kim ◽  
Hoon Kim ◽  
Hong Mo Koo ◽  
Jai Kyeong Kim ◽  
Young Chul Kim ◽  
...  

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.


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