Structural and optical properties of highly (110)-oriented non-polar ZnO evaporated films on Si substrates

2017 ◽  
Vol 421 ◽  
pp. 891-898 ◽  
Author(s):  
Shang-Dong Yang ◽  
Yu-Xiang Zheng ◽  
Liao Yang ◽  
Zhun-Hua Liu ◽  
Wen-Jie Zhou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Si Substrates

scholarly journals Structural and optical properties of ZnO films obtained on mesoporous Si substrates by the method of HF magnetron sputtering

2020 ◽  
Vol 44 (1) ◽  
pp. 57-66
Author(s):  
Valeriy KIDALOV ◽  
Alena DYADENCHUK ◽  
Yuriy BACHERIKOV ◽  
Anton ZHUK ◽  
Tetyana GORBANIUK ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Zno Films ◽  
Structural And Optical Properties ◽  
Si Substrates

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FG07 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Satoshi Nishikawa ◽  
Tomohiko Imanishi ◽  
Kohei Ozaki ◽  
Keisuke Yamane ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Structural And Optical Properties ◽  
Si Substrates

Structural and optical properties of epitaxial CuGaS2 films on Si substrates

2003 ◽  
Vol 431-432 ◽  
pp. 219-222 ◽  
Author(s):  
H. Metzner ◽  
J. Cieslak ◽  
U. Grossner ◽  
Th. Hahn ◽  
U. Kaiser ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Si Substrates

Preparation and Properties of N-ZnS Film/P-Si Heterojunction

2011 ◽  
Vol 311-313 ◽  
pp. 1277-1280
Author(s):  
Jian Huang ◽  
Lin Jun Wang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
Run Xu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Heterojunction Diode ◽  
Structural And Optical Properties ◽  
Si Substrates ◽  
Glass Substrates ◽  
P Type ◽  
Zns Films

ZnS films were prepared on silicon (Si) and glass substrates by radio-frequency (RF) magnetron sputtering method. The effect of annealing treatment on the structural and optical properties of ZnS films was studied. The results showed that annealing treatment was helpful in improving the crystalline quality of the ZnS films, and the bandgap was about 3.61eV and 3.49eV for films with and without annealing, respectively. A ZnS/ Si heterojunction diode was fabricated successfully by depositing ZnS films on p-type single-crystalline Si substrates. The electrical and optical property of the device was reported.

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