scholarly journals Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry

2017 ◽  
Vol 421 ◽  
pp. 389-396 ◽  
Author(s):  
Yao Liu ◽  
Qing Xuan Li ◽  
Ling Yu Wan ◽  
Bahadir Kucukgok ◽  
Ehsan Ghafari ◽  
...  
2016 ◽  
Vol 108 (6) ◽  
pp. 061905 ◽  
Author(s):  
Yajie Jiang ◽  
Arman Mahboubi Soufiani ◽  
Angus Gentle ◽  
Fuzhi Huang ◽  
Anita Ho-Baillie ◽  
...  

2013 ◽  
Vol 6 (12) ◽  
pp. 121101 ◽  
Author(s):  
Fan Zhang ◽  
Rong-Jun Zhang ◽  
Dong-Xu Zhang ◽  
Zi-Yi Wang ◽  
Ji-Ping Xu ◽  
...  

2013 ◽  
Vol 113 (18) ◽  
pp. 183515 ◽  
Author(s):  
S. G. Choi ◽  
L. M. Gedvilas ◽  
S. Y. Hwang ◽  
T. J. Kim ◽  
Y. D. Kim ◽  
...  

AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035117
Author(s):  
Qiao Chen ◽  
Xiangqi Wang ◽  
Min Zhang ◽  
Zilong Xu ◽  
Junbo Gong ◽  
...  

2019 ◽  
Vol 86 (2) ◽  
pp. 276-282
Author(s):  
Yuanlan Liang ◽  
Fangze Wang ◽  
Xuguang Luo ◽  
Qingxuan Li ◽  
Tao Lin ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 41
Author(s):  
Najat Andam ◽  
Siham Refki ◽  
Hidekazu Ishitobi ◽  
Yasushi Inouye ◽  
Zouheir Sekkat

The determination of optical constants (i.e., real and imaginary parts of the complex refractive index (nc) and thickness (d)) of ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields the optical thickness (i.e., the product of nc and d) of the film, while profilometry and AFM yield its thickness, thereby allowing for the separate determination of nc and d. In this paper, we use SPR and profilometry to determine the complex refractive index of very thin (i.e., 58 nm) films of dye-doped polymers at different dye/polymer concentrations (a feature which constitutes the originality of this work), and we compare the SPR results with those obtained by using spectroscopic ellipsometry measurements performed on the same samples. To determine the optical properties of our film samples by ellipsometry, we used, for the theoretical fits to experimental data, Bruggeman’s effective medium model for the dye/polymer, assumed as a composite material, and the Lorentz model for dye absorption. We found an excellent agreement between the results obtained by SPR and ellipsometry, confirming that SPR is appropriate for measuring the optical properties of very thin coatings at a single light frequency, given that it is simpler in operation and data analysis than spectroscopic ellipsometry.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.


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