Optical properties and phase change transition in Ge2Sb2Te5 flash evaporated thin films studied by temperature dependent spectroscopic ellipsometry

2008 ◽  
Vol 104 (4) ◽  
pp. 043523 ◽  
Author(s):  
J. Orava ◽  
T. Wágner ◽  
J. Šik ◽  
J. Přikryl ◽  
M. Frumar ◽  
...  
2013 ◽  
Vol 6 (12) ◽  
pp. 121101 ◽  
Author(s):  
Fan Zhang ◽  
Rong-Jun Zhang ◽  
Dong-Xu Zhang ◽  
Zi-Yi Wang ◽  
Ji-Ping Xu ◽  
...  

2013 ◽  
Vol 113 (18) ◽  
pp. 183515 ◽  
Author(s):  
S. G. Choi ◽  
L. M. Gedvilas ◽  
S. Y. Hwang ◽  
T. J. Kim ◽  
Y. D. Kim ◽  
...  

2019 ◽  
Vol 86 (2) ◽  
pp. 276-282
Author(s):  
Yuanlan Liang ◽  
Fangze Wang ◽  
Xuguang Luo ◽  
Qingxuan Li ◽  
Tao Lin ◽  
...  

2016 ◽  
Vol 4 (33) ◽  
pp. 7775-7782 ◽  
Author(s):  
Paul F. Ndione ◽  
Zhen Li ◽  
Kai Zhu

Spectroscopic ellipsometry analysis of optical transitions and optical constants in hybrid organic–inorganic perovskite alloys.


2016 ◽  
Vol 108 (6) ◽  
pp. 061905 ◽  
Author(s):  
Yajie Jiang ◽  
Arman Mahboubi Soufiani ◽  
Angus Gentle ◽  
Fuzhi Huang ◽  
Anita Ho-Baillie ◽  
...  

2020 ◽  
pp. 2050044
Author(s):  
SAHAR MORADI ◽  
HASSAN SEDGHI

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.


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