Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

2017 ◽  
Vol 404 ◽  
pp. 34-39 ◽  
Author(s):  
R. Riahi ◽  
L. Derbali ◽  
B. Ouertani ◽  
H. Ezzaouia
Keyword(s):  
Porous Silicon ◽  
Nickel Oxide ◽  
Temperature Dependence ◽  
Optoelectronic Properties

Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films

2003 ◽  
Vol 101 (1-3) ◽  
pp. 334-337 ◽  
Author(s):  
M. Theodoropoulou ◽  
C.A. Krontiras ◽  
N. Xanthopoulos ◽  
S.N. Georga ◽  
M.N. Pisanias ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Ac Electrical Conductivity ◽  
Silicon Thin Films

Electrical conduction in porous silicon: temperature dependence

2000 ◽  
Vol 31 (3) ◽  
pp. 187-191 ◽  
Author(s):  
Mikrajuddin ◽  
F.G Shi ◽  
K Okuyama
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Electrical Conduction

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

1991 ◽  
Vol 256 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Hideki Koyama
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Size Effect ◽  
Band Gap ◽  
Visible Region ◽  
Optoelectronic Properties ◽  
Porous Si ◽  
Quantum Size ◽  
Effect Model ◽  
Injection Type

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon

2001 ◽  
Vol 46 (1) ◽  
pp. 63-67 ◽  
Author(s):  
S. N. Bashchenko ◽  
I. V. Blonskii ◽  
M. S. Brodyn ◽  
V. N. Kadan ◽  
Yu. G. Skryshevskii
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Uv Irradiation

Modification of optoelectronic properties of porous silicon produced in an electrolyte based on heavy water

2000 ◽  
Vol 34 (6) ◽  
pp. 728-731 ◽  
Author(s):  
B. V. Kamenev ◽  
E. A. Konstantinova ◽  
P. K. Kashkarov ◽  
V. Yu. Timoshenko
Keyword(s):  
Porous Silicon ◽  
Heavy Water ◽  
Optoelectronic Properties
Sign in / Sign up

Export Citation Format

Share Document