Temperature dependence of the photoluminescence of all-porous-silicon optical microcavities

1999 ◽  
Vol 85 (3) ◽  
pp. 1760-1764 ◽  
Author(s):  
M. Cazzanelli ◽  
C. Vinegoni ◽  
L. Pavesi
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Optical Microcavities

Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films

2003 ◽  
Vol 101 (1-3) ◽  
pp. 334-337 ◽  
Author(s):  
M. Theodoropoulou ◽  
C.A. Krontiras ◽  
N. Xanthopoulos ◽  
S.N. Georga ◽  
M.N. Pisanias ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Ac Electrical Conductivity ◽  
Silicon Thin Films

Stabilization of Porous Silicon Free-Standing Coupled Optical Microcavities by Surface Chemical Modification

2019 ◽  
Vol 16 (3) ◽  
pp. 211-219 ◽  
Author(s):  
Bernard Gelloz ◽  
Kouichiro Murata ◽  
Toshiyuki Ohta ◽  
Mher Ghulinyan ◽  
Lorenzo Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Modification ◽  
Surface Chemical ◽  
Free Standing ◽  
Optical Microcavities ◽  
Surface Chemical Modification

Electrical conduction in porous silicon: temperature dependence

2000 ◽  
Vol 31 (3) ◽  
pp. 187-191 ◽  
Author(s):  
Mikrajuddin ◽  
F.G Shi ◽  
K Okuyama
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Electrical Conduction

The effect of UV irradiation on temperature dependence of photoluminescence and photoacoustic response in porous silicon

2001 ◽  
Vol 46 (1) ◽  
pp. 63-67 ◽  
Author(s):  
S. N. Bashchenko ◽  
I. V. Blonskii ◽  
M. S. Brodyn ◽  
V. N. Kadan ◽  
Yu. G. Skryshevskii
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Uv Irradiation

Optical Photoluminescence due to the Recombination of Donor-Acceptor Pairs in Porous Silicon

2000 ◽  
Vol 638 ◽  
Author(s):  
J. P. Zheng ◽  
X. Wei
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
High Temperatures ◽  
Thermal Energy ◽  
Low Temperatures ◽  
Ionization Energy ◽  
Photon Emission ◽  
Peak Wavelength ◽  
Exciton Recombination ◽  
Donor Acceptor

AbstractThe temperature dependence of the intensity, peak-wavelength, and bandwidth of photoluminescence (PL) spectra was studied in the porous silicon (PS) sample. To explain the observed temperature dependence, we proposed a model for the origin of the PL in PS. At low temperatures, the photon emission was dominated by the recombination of donor-acceptor pairs with ionization energies of about 4 meV. The donor and the acceptor were spatially separated with a distance of about 3.8 nm, which was about the crystalline size of the PS. Whereas at high temperatures where thermal energy exceeded the ionization energy, the photon emission was mainly from the exciton recombination.

Multiparametric sensor for air pollutants based on a porous silicon optical microcavity

2000 ◽  
Vol 638 ◽  
Author(s):  
Z. Gaburro ◽  
G. Faglia ◽  
C. Baratto ◽  
G. Sberveglieri ◽  
L. Pavesi
Keyword(s):  
Porous Silicon ◽  
Electrical Conduction ◽  
Volume Ratio ◽  
Peak Shift ◽  
Peak Position ◽  
Index Of Refraction ◽  
Photoluminescence Intensity ◽  
Spectral Position ◽  
Additional Information ◽  
Optical Microcavities

AbstractWe experimentally demonstrate that porous silicon optical microcavities can be effectively used as multi-parametric gas sensors. As known, the photoluminescence intensity and electrical conduction of porous silicon are strongly dependent on environmental properties, such as the dipole moment of molecules of surrounding gases. The sensitivity is large due to the large surface/volume ratio of porous silicon. While these effects can be observed in any porous silicon structure, microcavities of porous silicon allow an additional sensing parameter, i.e. the spectral position of the resonance cavity peak. The position of the peak depends on the index of refraction of the environment, and gives independent additional information. Moreover, we show that the dynamic response of the peak shift is much faster comparing the other sensing parameters. The combined effects on the peak position, luminescence intensity and electrical conduction can allow discrimination between different substances, and therefore porous silicon optical microcavities can work as multi-parametric optical/electrical sensors. We report detection of 1 ppm of NO2 and 500 ppm of ethanol at room temperature. With NO2, the electrical conduction increases and PL quenches, but the peak does not shift, whereas the peak shifts with ethanol (no significant PL quenching is observed at 500 ppm). This suggests that discrimination between different species can be achieved.

Electron Time-of-Flight Measurements in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Prasanna Rao ◽  
E. A. Schiff ◽  
L. Tsybeskov ◽  
P. M. Fauchet
Keyword(s):  
Electron Transport ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Fractal Structure ◽  
Electron Drift ◽  
Silicon Diode ◽  
Transient Photocurrent ◽  
Multiple Trapping ◽  
Temperature Electron ◽  
Flight Measurements

AbstractTransient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

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