scholarly journals Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

2017 ◽  
Vol 395 ◽  
pp. 136-139 ◽  
Author(s):  
N. Fernández-Delgado ◽  
M. Herrera ◽  
M.F. Chisholm ◽  
M.A. Kamarudin ◽  
Q.D. Zhuang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Self Assembled

Unveiling structural properties of self-assembled quantum dots

2013 ◽  
Author(s):  
M. Gunasekera ◽  
C. Rajapaksha ◽  
A. Freundlich
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Self Assembled

Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching

2002 ◽  
Vol 722 ◽  
Author(s):  
S. Kiravittaya ◽  
R. Songmuang ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Flat Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Etching Depth ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

The effects of thermal annealing in self-assembled Ge/Si quantum dots

2007 ◽  
Vol 253 (10) ◽  
pp. 4792-4795 ◽  
Author(s):  
QiJia Cai ◽  
Hao Zhou ◽  
Fang Lu
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Self Assembled ◽  
Si Quantum Dots

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

2000 ◽  
Vol 208 (1-4) ◽  
pp. 791-794 ◽  
Author(s):  
Q.D Zhuang ◽  
J.M Li ◽  
X.X Wang ◽  
Y.P Zeng ◽  
Y.T Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Self Assembled

Optical and structural properties of InAsP ternary self-assembled quantum dots embedded in GaAs

2002 ◽  
Vol 81 (16) ◽  
pp. 2953-2955 ◽  
Author(s):  
E. Ribeiro ◽  
R. L. Maltez ◽  
W. Carvalho ◽  
D. Ugarte ◽  
G. Medeiros-Ribeiro
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Self Assembled

scholarly journals In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Mi-Feng Li ◽  
Ying Yu ◽  
Ji-Fang He ◽  
Li-Juan Wang ◽  
Yan Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Self Assembled

In situ functionalization of self-assembled dendrimer nanofibers with cadmium sulfide quantum dots through simple ionic-substitution

2016 ◽  
Vol 40 (7) ◽  
pp. 6325-6331 ◽  
Author(s):  
V. Astachov ◽  
M. Garzoni ◽  
A. Danani ◽  
K.-L. Choy ◽  
G. M. Pavan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cadmium Sulfide ◽  
Simple Approach ◽  
Ionic Substitution ◽  
Cds Qds ◽  
Self Assembled ◽  
Poly Propylene ◽  
In Situ Functionalization

Cadmium sulfide quantum dots (CdS-QDs) can be generated along poly(propylene imine) (PPI) dendrimer-based self-assembled nanofibers through a simple approach based on ionic substitution.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

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