Picosecond laser texturization of mc-silicon for photovoltaics: A comparison between 1064 nm, 532 nm and 355 nm radiation wavelengths

2016 ◽  
Vol 371 ◽  
pp. 196-202 ◽  
Author(s):  
Simona Binetti ◽  
Alessia Le Donne ◽  
Andrea Rolfi ◽  
Beat Jäggi ◽  
Beat Neuenschwander ◽  
...  
Keyword(s):  
Picosecond Laser ◽  
532 Nm

Clearance of yellow tattoo ink with a novel 532-nm picosecond laser

2015 ◽  
Vol 47 (4) ◽  
pp. 285-288 ◽  
Author(s):  
Hamad Alabdulrazzaq ◽  
Jeremy A. Brauer ◽  
Yoon-Soo Bae ◽  
Roy G. Geronemus
Keyword(s):  
Picosecond Laser ◽  
532 Nm

scholarly journals Developments of Space Debris Laser Ranging Technology Including the Applications of Picosecond Lasers

2021 ◽  
Vol 11 (21) ◽  
pp. 10080
Author(s):  
Haifeng Zhang ◽  
Mingliang Long ◽  
Huarong Deng ◽  
Shaoyu Cheng ◽  
Zhibo Wu ◽  
...  
Keyword(s):  
Space Debris ◽  
New Technologies ◽  
Pulse Repetition Frequency ◽  
Average Power ◽  
Picosecond Laser ◽  
Laser Ranging ◽  
Telescope Array ◽  
High Pulse ◽  
First Time ◽  
532 Nm

Debris laser ranging (DLR) is receiving considerable attention as an accurate and effective method of determining and predicting the orbits of space debris. This paper reports some technologies of DLR, such as the high pulse repetition frequency (PRF) laser pulse, large-aperture telescope, telescope array, multi-static stations receiving signals. DLR with a picosecond laser at the Shanghai Astronomical Observatory is also presented. A few hundred laps of space debris laser-ranging measurements have been made. A double-pulse picosecond laser with an average power of 4.2 W, a PRF of 1 kHz, and a wavelength of 532 nm has been implemented successfully in DLR, it’s the first time that DLR technology has reached a ranging precision at the sub-decimeter level. In addition, the characteristics of the picosecond-pulse-width laser transmission with the advantages of transmission in laser ranging were analyzed. With a mode of the pulse-burst picosecond laser having high average power, the DLR system has tracked small debris with a radar cross-section (RCS) of 0.91 m2 at a ranging distance up to 1726.8 km, corresponding to an RCS of 0.1 m2 at a distance of 1000 km. These works are expected to provide new technologies to further improve the performance of DLR.

scholarly journals Picosecond Laser Interference Patterning of Periodical Micro-Architectures on Metallic Molds for Hot Embossing

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3409 ◽  
Author(s):  
Yangxi Fu ◽  
Marcos Soldera ◽  
Wei Wang ◽  
Bogdan Voisiat ◽  
Andrés Fabián Lasagni
Keyword(s):  
Picosecond Laser ◽  
Processing Parameters ◽  
Hot Embossing ◽  
Surface Structures ◽  
Laser Source ◽  
Laser Interference ◽  
Periodic Surface ◽  
Direct Laser ◽  
Direct Laser Interference Patterning ◽  
532 Nm

In this work, it is demonstrated that direct laser interference patterning (DLIP) is a method capable of producing microtextured metallic molds for hot embossing processes. Three different metals (Cr, Ni, and Cu), relevant for the mold production used in nanoimprinting systems, are patterned by DLIP using a picosecond laser source emitting at a 532 nm wavelength. The results show that the quality and surface topography of the produced hole-like micropatterns are determined by the laser processing parameters, such as irradiated energy density and the number of pulses. Laser-induced periodic surface structures (LIPSS) are also observed on the treated surfaces, whose shapes, periodicities, and orientations are strongly dependent on the accumulated fluence. Finally, the three structured metals are used as embossing molds to imprint microlenses on polymethyl methacrylate (PMMA) foils using an electrohydraulic press. Topographical profiles demonstrate that the obtained structures are comparable to the masters showing a satisfactory reproduction of the texture. The polymeric microlens arrays that showed the best surface homogeneity and overall quality were those embossed with the Cr molds.

Laser Treatment of Professional Tattoos With a 1064/532-nm Dual-Wavelength Picosecond Laser

2017 ◽  
Vol 43 (12) ◽  
pp. 1434-1440 ◽  
Author(s):  
Arielle N.B. Kauvar ◽  
Terrence C. Keaney ◽  
Tina Alster
Keyword(s):  
Laser Treatment ◽  
Picosecond Laser ◽  
Dual Wavelength ◽  
532 Nm

INVESTIGATION ON NONLINEAR TRANSMISSION PROPERTY OF EXCITED STATE PROTON TRANSFER MOLECULE 2-(2′-HYDROXYPHENYL)BENZOXAZOLE

2000 ◽  
Vol 09 (03) ◽  
pp. 309-314 ◽  
Author(s):  
DONG XIAO ◽  
GUILAN ZHANG ◽  
HAIYAN WANG ◽  
GUOQING TANG ◽  
WENJU CHEN
Keyword(s):  
Excited State ◽  
Proton Transfer ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Transmission Property ◽  
Nonlinear Transmission ◽  
Ultrafast Optical ◽  
Excited State Proton Transfer ◽  
532 Nm ◽  
Proton Transfer Process

Nonlinear transmission property of excited state proton transfer molecule 2-(2′-hydroxyphenyl)benzoxazole was investigated at 355 nm and 532 nm using picosecond laser pulses. The experiment result shows that the transmissivity of 2-(2′-hydroxyphenyl)benzoxazole is nonlinear at 355 nm but it is linear at 532 nm. The nonlinear transmissivity of 2-(2′-hydroxyphenyl)benzoxazole originates from the larger nonlinearity of tautomer formed in excited state proton transfer process. Therefore 2-(2′-hydroxyphenyl)benzoxazole might be used as ultrafast optical amplitude limit material.

scholarly journals Picosecond Laser Shock Peening of Nimonic 263 at 1064 nm and 532 nm Wavelength

Metals ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 41 ◽  
Author(s):  
Sanja Petronic ◽  
Tatjana Sibalija ◽  
Meri Burzic ◽  
Suzana Polic ◽  
Katarina Colic ◽  
...  
Keyword(s):  
Picosecond Laser ◽  
Laser Shock Peening ◽  
Laser Shock ◽  
Shock Peening ◽  
532 Nm

scholarly journals Removal of a red tattoo on the lips using a 532-nm picosecond laser

2021 ◽  
Vol 27 (3) ◽  
pp. 109-111
Author(s):  
adSyeo Young Wee ◽  
Tae Hyung Kim ◽  
Eun Soo Park
Keyword(s):  
Picosecond Laser ◽  
532 Nm

Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Lietoila ◽  
J. F. Gibbons
Keyword(s):  
Crystalline Silicon ◽  
Variable Parameter ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Hot Carriers ◽  
Thermalization Time ◽  
Picosecond Laser Pulses ◽  
Carrier Temperature ◽  
Energy Relaxation Time ◽  
532 Nm

ABSTRACTA previously presented computer model was used to calculate melt thresholds and carrier temperatures in crystalline silicon and gallium arsenide subjected to picosecond laser pulses at 532 nm. The energy relaxation time of hot carriers was a variable parameter. For Si, a thermalization time of 1 ps yields results which are in very satisfactory agreement with published experimental data: the melt threshold is 0.19 J/cm2, and the maximum carrier temperature for the threshold pulse is 5500 K. The melt threshold in GaAs is substantially less, 0.03 J/cm2 for a thermalization time of 1 ps.

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