Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Lietoila ◽  
J. F. Gibbons
Keyword(s):  
Crystalline Silicon ◽  
Variable Parameter ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Hot Carriers ◽  
Thermalization Time ◽  
Picosecond Laser Pulses ◽  
Carrier Temperature ◽  
Energy Relaxation Time ◽  
532 Nm

ABSTRACTA previously presented computer model was used to calculate melt thresholds and carrier temperatures in crystalline silicon and gallium arsenide subjected to picosecond laser pulses at 532 nm. The energy relaxation time of hot carriers was a variable parameter. For Si, a thermalization time of 1 ps yields results which are in very satisfactory agreement with published experimental data: the melt threshold is 0.19 J/cm2, and the maximum carrier temperature for the threshold pulse is 5500 K. The melt threshold in GaAs is substantially less, 0.03 J/cm2 for a thermalization time of 1 ps.

scholarly journals Формирование кремниевых наночастиц методом импульсной лазерной абляции пористого кремния в жидкостях

2020 ◽  
Vol 46 (14) ◽  
pp. 13
Author(s):  
А.В. Скобёлкина ◽  
Ф.В. Кашаев ◽  
А.В. Колчин ◽  
Д.В. Шулейко ◽  
Т.П. Каминская ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Picosecond Laser Pulses

It was shown that the ablation of meso- and microporous silicon layers by picosecond laser pulses in water and ethanol leads to the formation of nanosilicon suspensions with a diameter of less than 100 nm. It has been demonstrated that the use of porous silicon allows to reduce the thresholds of laser ablation and increase the concentration of particles in suspensions in comparison with the case of crystalline silicon ablation.

Computer Model of the Temperature and Carrier Concentration Induced in Si by Nanosecond and Picosecond Laser Pulses

1980 ◽  
Vol 1 ◽  
Author(s):  
Arto Lietoila ◽  
James Gibbons
Keyword(s):  
Carrier Concentration ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Lattice Temperature ◽  
Heat Of Fusion ◽  
Carrier System ◽  
Nanosecond Pulses ◽  
Picosecond Laser Pulses ◽  
Carrier Temperature ◽  
Threshold Energies

ABSTRACTA set of simultaneous equations for lattice temperature, carrier concentration and carrier temperature in Si is numerically solved for typical nanosecond and picosecond laser pulses. The calculated threshold energies required to reach Si melting temperature are consistent with measured thresholds to reach a flat-top reflectivity of ~ 70% for typical nanosecond pulses at 1.06 and .53 µm. In the picosecond regime, almost the entire pulse energy is at first stored in the carrier system, and a carrier temperature exceeding 30,000 K is achieved for a 3 J/cm2, 30 ps pulse at 1.06 µm. In this case, the surface carrier concentration reaches a high enough value to cause an enhanced reflectivity from the plasma lasting for at least 0.1 ns. The lattice temperature reaches 1410°C, while carriers relax their energy to the lattice after the pulse, and the energy stored in the carrier system would be enough to supply the heat of fusion at the silicon surface.

Saturable and reverse saturable absorption in silver nanodots at 532 nm using picosecond laser pulses

2008 ◽  
Vol 104 (7) ◽  
pp. 073107 ◽  
Author(s):  
Ullas Gurudas ◽  
Elijah Brooks ◽  
Daniel M. Bubb ◽  
Sebastian Heiroth ◽  
Thomas Lippert ◽  
...  
Keyword(s):  
Picosecond Laser ◽  
Laser Pulses ◽  
Saturable Absorption ◽  
Reverse Saturable Absorption ◽  
Picosecond Laser Pulses ◽  
Silver Nanodots ◽  
532 Nm

Electric field probing by picosecond laser pulses

1992 ◽  
Vol 28 (12) ◽  
pp. 1137 ◽  
Author(s):  
A. Krotkus ◽  
V. Pašiškevičius
Keyword(s):  
Electric Field ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Picosecond Laser Pulses

Analogic Transmission Of Picosecond Laser Pulses Through Optical Step Index Optical Fiber

1985 ◽  
Author(s):  
C. Cavailler ◽  
D. Gontier ◽  
J. Launspach ◽  
C. Froehly ◽  
D. Largeau ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Picosecond Laser ◽  
Laser Pulses ◽  
Step Index ◽  
Picosecond Laser Pulses

Two-photon photoemission from metals induced by picosecond laser pulses

1977 ◽  
Vol 15 (10) ◽  
pp. 4557-4563 ◽  
Author(s):  
J. H. Bechtel ◽  
W. Lee Smith ◽  
N. Bloembergen
Keyword(s):  
Picosecond Laser ◽  
Laser Pulses ◽  
Two Photon ◽  
Picosecond Laser Pulses

Shaping of picosecond laser pulses with THz intensitymodulation in the infrared, visible, and ultravioletranges

2021 ◽  
Author(s):  
Igor Kuzmin ◽  
Sergey Mironov ◽  
Mikhail Martyanov ◽  
Anatoly Poteomkin ◽  
Efim Khazanov
Keyword(s):  
Picosecond Laser ◽  
Laser Pulses ◽  
Picosecond Laser Pulses
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