Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics

2016 ◽  
Vol 370 ◽  
pp. 373-379 ◽  
Author(s):  
Arvind Kumar ◽  
Sandip Mondal ◽  
K.S.R. Koteswara Rao
Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 6926-6934 ◽  
Author(s):  
Jaekyun Kim ◽  
Chang Park ◽  
Gyeongmin Yi ◽  
Myung-Seok Choi ◽  
Sung Park

2021 ◽  
Vol 723 ◽  
pp. 138594
Author(s):  
Qian Zhang ◽  
Cheng Ruan ◽  
Guodong Xia ◽  
Hongyu Gong ◽  
Sumei Wang

2014 ◽  
Vol 55 ◽  
pp. 99-105 ◽  
Author(s):  
Joohye Jung ◽  
Si Joon Kim ◽  
Keun Woo Lee ◽  
Doo Hyun Yoon ◽  
Yeong-gyu Kim ◽  
...  

2013 ◽  
Vol 24 (48) ◽  
pp. 484010 ◽  
Author(s):  
Jun Peng ◽  
Qijun Sun ◽  
Zhichun Zhai ◽  
Jianyu Yuan ◽  
Xiaodong Huang ◽  
...  

2017 ◽  
Vol 5 (22) ◽  
pp. 11071-11077 ◽  
Author(s):  
Jie Cao ◽  
Hui Yu ◽  
Shuang Zhou ◽  
Minchao Qin ◽  
Tsz-Ki Lau ◽  
...  

A new strategy is introduced to fabricate NiOxfilms over perovskite layers to achieve highly stable perovskite solar cells.


RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.


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