scholarly journals Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 6926-6934 ◽  
Author(s):  
Jaekyun Kim ◽  
Chang Park ◽  
Gyeongmin Yi ◽  
Myung-Seok Choi ◽  
Sung Park
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Temperature Solution

High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60Derivative

2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Long Chain

scholarly journals Organic thin-film transistors with over 10 cm2/Vs mobility through low-temperature solution coating

2018 ◽  
Vol 19 (2) ◽  
pp. 71-80 ◽  
Author(s):  
Chuan Liu ◽  
Xuying Liu ◽  
Takeo Minari ◽  
Masayuki Kanehara ◽  
Yong-Young Noh
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Temperature Solution

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Dielectric Films ◽  
Operating Voltage ◽  
Polymer Modification ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Low Leakage

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.

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