Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

2016 ◽  
Vol 371 ◽  
pp. 118-128 ◽  
Author(s):  
Baojun Yan ◽  
Shulin Liu ◽  
Yuzhen Yang ◽  
Yuekun Heng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Alignment ◽  
X Ray

Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface

2006 ◽  
Vol 527-529 ◽  
pp. 1071-1074 ◽  
Author(s):  
Carey M. Tanner ◽  
Jong Woo Choi ◽  
Jane P. Chang
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Atomic Layer ◽  
Band Alignment ◽  
Functional Theory ◽  
X Ray ◽  
Conduction Band Offset ◽  
Mos Devices ◽  
Layer Deposition

The electronic properties of HfO2 films on 4H-SiC were investigated to determine their suitability as high-κ dielectrics in SiC power MOS devices. The band alignment at the HfO2/4HSiC interface was determined by X-ray photoelectron spectroscopy (XPS) and supported by density functional theory (DFT) calculations. For the experimental study, HfO2 films were deposited on ntype 4H-SiC by atomic layer deposition (ALD). XPS analysis yielded valence and conduction band offsets of 1.69 eV and 0.75 eV, respectively. DFT predictions based on two monoclinic HfO2/4HSiC (0001) structures agree well with this result. The small conduction band offset suggests the potential need for further interface engineering and/or a buffer layer to minimize electron injection into the gate oxide.

Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy

2015 ◽  
Vol 650 ◽  
pp. 502-507 ◽  
Author(s):  
Xinke Liu ◽  
Jiazhu He ◽  
Dan Tang ◽  
Qiang Liu ◽  
Jiao Wen ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Alignment ◽  
X Ray ◽  
High K

Band alignment of atomic layer deposited TiO 2 /multilayer MoS 2 interface determined by x -ray photoelectron spectroscopy

2017 ◽  
Vol 698 ◽  
pp. 141-146 ◽  
Author(s):  
Xinke Liu ◽  
Le Chen ◽  
Qiang Liu ◽  
Jiazhu He ◽  
Kuilong Li ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Alignment ◽  
X Ray

scholarly journals Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Baojun Yan ◽  
Shulin Liu ◽  
Yuekun Heng ◽  
Yuzhen Yang ◽  
Yang Yu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Offset ◽  
X Ray

Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 101 (22) ◽  
pp. 222110 ◽  
Author(s):  
A. K. Rumaiz ◽  
J. C. Woicik ◽  
C. Weiland ◽  
Q. Xie ◽  
D. P. Siddons ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
X Ray

Band alignment of HfO2/Al0.25Ga0.75N determined by x-ray photoelectron spectroscopy: Effect of SiH4 surface treatment

2014 ◽  
Vol 104 (9) ◽  
pp. 091605 ◽  
Author(s):  
Man Hon Samuel Owen ◽  
Maruf Amin Bhuiyan ◽  
Qian Zhou ◽  
Zheng Zhang ◽  
Ji Sheng Pan ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
X Ray
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